參數(shù)資料
型號: HAT2083RJ
英文描述: TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 60V V(BR)DSS | 5A I(D) | SO
中文描述: 晶體管| MOSFET的|配對| N溝道| 60V的五(巴西)直| 5A條(?。﹟蘇
文件頁數(shù): 1/6頁
文件大?。?/td> 37K
代理商: HAT2083RJ
Application
Power switching
Features
Low on–resistance
Capable of2.5V gate drive
Low drive current
High density mounting
Ordering Information
————————————————————
Hitachi Code
————————————————————
EIAJ Code
————————————————————
JEDEC Code
————————————————————
FP–8D
SC–527–8A
Table 1 Absolute Maximum Ratings
(Ta = 25°C)
Item
———————————————————————————————————————————
Drain to source voltage
V
DSS
———————————————————————————————————————————
Gate to source voltage
V
GSS
———————————————————————————————————————————
Drain current
I
D
———————————————————————————————————————————
Drain peak current
I
D(pulse)
*
———————————————————————————————————————————
Body–drain diode reverse drain current
I
DR
———————————————————————————————————————————
Channel dissipation
Pch**
———————————————————————————————————————————
Channel temperature
Tch
———————————————————————————————————————————
Storage temperature
Tstg
———————————————————————————————————————————
*
PW
10 μs, duty cycle
1 %
**
When using the glass epoxy board (40
x
40
x
1.6 mm)
Symbol
Ratings
Unit
30
V
±10
V
5
A
20
A
5
A
1
W
150
°C
–55 to +150
°C
1234
5
6
7
8
SOP–8
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
G
D
S S S
1 2
D D D
4
3
5 6
7 8
HAT2001F
Silicon N Channel Power MOS FET
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