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參數(shù)資料
| 型號(hào)： | HAT2064R |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel Power MOS FET Power Switching |
| 中文描述： | 硅?通道功率MOS場(chǎng)效應(yīng)管電源開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 4/10頁(yè) |
| 文件大?。?/td> | 48K |
| 代理商： | HAT2064R |
HAT2064R
4
Main Characteristics
C
Ambient Temperature Ta (C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
D
D
Maximum Safe Operation Area
Drain to Source Voltage V (V)
D
D
Typical Output Characteristics
Gate to Source Voltage V (V)
GS
D
D
Typical Transfer Characteristics
Note 4 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
50
40
30
20
10
0
2
4
6
8
10
50
40
30
20
10
0
1
2
3
4
5
Tc = 75C
25C
-25C
4.0
3.0
2.0
1.0
0
50
100
150
200
100
10
1
0.1
0.01
0.1
0.3
1
3
10
30
100
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
V = 10 V
Pulse Test
500
Ta = 25 C
1 shot Pulse
PW=10ms
10
μ
s
100
μ
s
Operation in
this area is
limited by R
DS(on)
Noe4
DCOperaion(PW<10s)
V = 2.5 V
10V
4.5 V
3.5 V
Pulse Test
3 V
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| HAT2064R-EL-E | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon N Channel Power MOS FET Power Switching |
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