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參數(shù)資料
| 型號： | HAT2064R |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel Power MOS FET Power Switching |
| 中文描述： | 硅?通道功率MOS場效應(yīng)管電源開關(guān) |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 48K |
| 代理商： | HAT2064R |
HAT2064R
3
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
30
—
—
V
I
D
= 10 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±
20
—
—
V
I
G
=
±
100
μ
A, V
DS
= 0
Gate to source leak current
I
GSS
I
DSS
—
—
±
10
μ
A
μ
A
V
GS
=
±
16 V, V
DS
= 0
V
DS
= 30 V, V
GS
= 0
Zero gate voltege drain
current
—
—
1
Gate to source cutoff voltage
V
GS(off)
1.0
—
2.5
V
V
DS
= 10 V,
I
D
= 1 mA
I
D
= 8 A, V
GS
= 10 V
Note3
I
D
= 8 A, V
GS
= 4.5 V
Note3
I
D
= 8 A, V
DS
= 10 V
Note3
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
Static drain to source on state R
DS(on)
resistance
—
5.0
6.3
m
m
R
DS(on)
|y
fs
|
Ciss
—
7.0
10
Forward transfer admittance
18
30
—
S
Input capacitance
—
2200
—
pF
Output capacitance
Coss
—
600
—
pF
Reverse transfer capacitance Crss
—
330
—
pF
Total gate charge
Qg
—
40
—
nc
V
DD
= 10 V
V
GS
= 10 V
I
D
= 16 A
V
GS
= 10 V, I
D
= 8 A
V
DD
≈
10 V
R
L
= 1.25
R
g
= 4.7
IF = 16 A, V
GS
= 0
Note3
Gate to source charge
Qgs
—
6
—
nc
Gate to drain charge
Qgd
—
8
—
nc
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
—
20
—
ns
Rise time
—
35
—
ns
Turn-off delay time
—
60
—
ns
Fall time
—
16
—
ns
Body–drain diode forward
voltage
—
0.9
1.17
V
Body–drain diode reverse
recovery time
Note:
3. Pulse test
t
rr
—
50
—
ns
IF = 16 A, V
= 0
diF/ dt = 50 A/
μ
s
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