參數(shù)資料
型號(hào): HAT2058RJ
廠商: Renesas Technology Corp.
英文描述: Silicon N Channel Power MOS FET High Speed Power Switching
中文描述: 硅?通道功率MOS FET的高速電源開關(guān)
文件頁數(shù): 2/10頁
文件大?。?/td> 76K
代理商: HAT2058RJ
HAT2058R/HAT2058RJ
2
Absolute Maximum Ratings (Ta = 25
°
C)
Ratings
Item
Symbol
HAT2058R
HAT2058RJ
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D
(pulse)
Note1
I
DR
100
100
V
Gate to source voltage
±
20
±
20
V
Drain current
4
4
A
Drain peak current
32
32
A
Body-drain diode reverse drain
current
4
4
A
Avalanche current
I
AP
Note4
E
AR
Note4
Pch
Note2
4
A
Avalanche energy
1.6
mJ
Channel dissipation
2
2
W
Pch
Note3
3
3
W
Channel temperature
Tch
150
150
°
C
°
C
Storage temperature
Notes: 1. PW
10
μ
s, duty cycle
1%
2. 1 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
10 s
3. 2 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
10 s
4. Value at Tch = 25
°
C, Rg
50
Tstg
–55 to +150
–55 to +150
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