參數(shù)資料
型號: HAT2028RJ
廠商: Hitachi,Ltd.
英文描述: Silicon N Channel Power MOS FET High Speed Power Switching
中文描述: 硅?通道功率MOS FET的高速電源開關
文件頁數(shù): 3/10頁
文件大?。?/td> 60K
代理商: HAT2028RJ
HAT2028R/HAT2028RJ
3
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdownvoltage
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
60
V
I
D
= 10 mA, V
GS
= 0
I
G
=
±
100
μ
A, V
DS
= 0
V
GS
=
±
16 V, V
DS
= 0
V
DS
= 60 V, V
GS
= 0
Gate to source breakdownvoltage
±
20
V
Gate to source leak current
±
10
μ
A
μ
A
μ
A
μ
A
μ
A
Zero gate voltage
HAT2028R
1
drain current
HAT2028RJ I
DSS
HAT2028R
0.1
Zero gate voltage
I
DSS
V
DS
= 48 V, V
GS
= 0
Ta = 125
°
C
drain current
HAT2028RJ I
DSS
10
Gate to source cutoff voltage
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
1.3
2.3
V
V
DS
= 10 V,
I
D
= 1 mA
I
D
= 2 A, V
GS
= 10 V
Note5
I
D
= 2 A, V
GS
= 4 V
Note5
I
D
= 2 A, V
DS
= 10 V
Note5
V
DS
= 10 V
V
GS
= 0
f = 1MHz
Static drain to source on state resistance
0.08
0.1
0.12
0.16
Forward transfer admittance
3.3
5
S
Input capacitance
280
pF
Output capacitance
Coss
150
pF
Reverse transfer capacitance
Crss
55
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
15
ns
V
GS
= 4 V, I
D
= 2 A
V
DD
30 V
Rise time
100
ns
Turn-off delay time
35
ns
Fall time
45
ns
Body–drain diode forwardvoltage
0.88
1.15
V
IF = 4 A, V
GS
= 0
Note5
IF = 4 A, V
= 0
diF/ dt = 50 A/
μ
s
Body–drain diode reverse recovery time
40
ns
Note:
5. Pulse test
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