參數(shù)資料
型號(hào): HAT2028RJ
廠商: Hitachi,Ltd.
英文描述: Silicon N Channel Power MOS FET High Speed Power Switching
中文描述: 硅?通道功率MOS FET的高速電源開(kāi)關(guān)
文件頁(yè)數(shù): 2/10頁(yè)
文件大?。?/td> 60K
代理商: HAT2028RJ
HAT2028R/HAT2028RJ
2
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
I
AP
60
V
Gate to source voltage
±
20
V
Drain current
4
A
Drain peak current
Note1
32
A
Body-drain diode reverse drain current
4
A
Avalanche current
HAT2028R
Note4
HAT2028RJ
4
A
Avalanche energy
HAT2028R
E
AR
Note4
HAT2028RJ
1.37
mJ
Channel dissipation
Pch
Note2
2
W
Channel dissipation
Pch
Note3
3
W
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Note:
1. PW
10
μ
s, duty cycle
1 %
2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
10s
3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
10s
4. Value at Tch=25
°
C, Rg
50
Tstg
– 55 to + 150
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