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參數(shù)資料
| 型號： | HAT1025R |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P Channel Power MOS FET(P溝道功率MOSFET) |
| 中文描述： | 硅P通道功率MOS FET性（P溝道功率MOSFET的） |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 76K |
| 代理商： | HAT1025R |
HAT1025R
4
Main Characteristics
C
Ambient Temperature Ta (
°
C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
D
D
Maximum Safe Operation Area
Drain to Source Voltage V (V)
D
D
Typical Output Characteristics
Gate to Source Voltage V (V)
D
D
Typical Transfer Characteristics
Note 5 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
4.0
3.0
2.0
1.0
0
50
100
150
200
–0.1
–100
–10
–1
–0.1
–0.01
–0.3
–1
–3
–10
–30
–100
–30
–3
–0.3
–0.03
10
μ
s
100
μ
s
PW=10ms
1ms
–20
–16
–12
–8
–4
0
–2
–4
–6
–8
–10
V = –1.5 V
–2 V
–2.5 V
–10 V
–5 V
–4 V
–3.5 V
–3 V
–20
–16
–12
–8
–4
0
–1
–2
–3
–4
–5
Tc = –25
°
C
75
°
C
25
°
C
2DieOeain
1DiveOpeaion
Operation in
this area is
limited by R
DS(on)
Pulse Test
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
Noe5
DCOpeaion(PW<10s
Ta = 25
°
C
1 shot Pulse
1 Drive Operation
V = –10 V
Pulse Test
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HAT1025R-EL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel Power MOS FET High Speed Power Switching |
| HAT1026R | 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET P-CH 30V 7A 8SOP - Tape and Reel |
| HAT1026R-EL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon P Channel Power MOSFET High Speed Power Switching |
| HAT1029R | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon P Channel Power MOS FET High Speed Power Switching |
| HAT1030T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | P-CHANNEL | 12V V(BR)DSS | 3A I(D) | SO |
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