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參數(shù)資料
| 型號： | HAT1025R |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P Channel Power MOS FET(P溝道功率MOSFET) |
| 中文描述： | 硅P通道功率MOS FET性（P溝道功率MOSFET的） |
| 文件頁數(shù)： | 3/10頁 |
| 文件大小： | 76K |
| 代理商： | HAT1025R |
HAT1025R
3
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
–20
—
—
V
I
D
= –10mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±
10
—
—
V
I
G
=
±
100
μ
A, V
DS
= 0
Gate to source leak current
I
GSS
I
DSS
—
—
±
10
–10
μ
A
μ
A
V
GS
=
±
8V, V
DS
= 0
V
DS
= –20 V, V
GS
= 0
Zero gate voltege drain
current
—
—
Gate to source cutoff voltage
V
GS(off)
–0.5
—
–1.5
V
V
DS
= –10V,
I
D
= –1mA
I
D
= –3A, V
GS
= –4V
I
= –3A, V
GS
= –2.5V
D
Static drain to source on state R
DS(on)
resistance
—
0.065
0.095
Note4
R
DS(on)
—
0.09
0.15
Forward transfer admittance
|y
fs
|
Ciss
4.5
7
—
S
I
D
= –3A, V
DS
= –10V
V
DS
= –10V
V
GS
= 0
f = 1MHz
Note4
Input capacitance
—
860
—
pF
Output capacitance
Coss
—
450
—
pF
Reverse transfer capacitance Crss
—
150
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
—
20
—
ns
V
GS
= –4V, I
D
= –3A
V
DD
–10V
Rise time
—
120
—
ns
Turn-off delay time
—
120
—
ns
Fall time
—
100
—
ns
Body–drain diode forward
voltage
—
–0.9
–1.4
V
IF = –4.5A, V
GS
= 0
Note4
Body–drain diode reverse
recovery time
Note:
4. Pulse test
t
rr
—
60
—
ns
IF = –4.5A, V
GS
= 0
diF/ dt =20A/
μ
s
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