參數(shù)資料
型號(hào): HAT1023R
廠商: Hitachi,Ltd.
英文描述: Silicon P-Channel Power MOS FET(P溝道功率MOSFET)
中文描述: 硅P溝道功率MOS FET性(P溝道功率MOSFET的)
文件頁數(shù): 3/5頁
文件大?。?/td> 28K
代理商: HAT1023R
HAT1023R
3
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
–20
V
I
D
= –10 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±
10
V
I
G
=
±
200
μ
A, V
DS
= 0
Gate to source leak current
I
GSS
±
10
–10
μ
A
μ
A
V
V
GS
=
±
6.5 V, V
DS
= 0
V
DS
= –20 V, V
GS
= 0
V
DS
= –10 V, I
D
= –1 mA
I
D
= –3 A
V
GS
= –4 V*
I
D
= –3 A
V
GS
= –2.5 V*
I
D
= –3 A
V
DS
= –10 V*
V
DS
= –10 V
V
GS
= 0
f = 1 MHz
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
V
GS(off)
R
DS(on)
–0.5
–1.5
Static drain to source on state
resistance
(0.023) 0.04
1
(0.04)
0.06
1
Forward transfer admittance
|y
fs
|
(6)
(10)
S
1
Input capacitance
Ciss
(1200)
pF
Output capacitance
Coss
(900)
pF
Reverse transfer capacitance
Crss
(350)
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
(20)
ns
V
GS
= –4 V, I
D
= –3 A
V
DD
= –10 V
Rise time
(300)
ns
Turn-off delay time
(350)
ns
Fall time
(400)
ns
Body to drain diode forward
voltage
(–0.8)
V
I
F
= –6.5 A, V
GS
= 0
Body to drain diode reverse
recovery time
Note
1. Pulse Test
trr
(200)
ns
I
= –6.5 A, V
GS
= 0
diF/dt = 20 A/
μ
s
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參數(shù)描述
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