參數(shù)資料
型號(hào): HAT1021R
廠商: Hitachi,Ltd.
英文描述: Silicon P Channel Power MOS FET(P溝道功率MOSFET)
中文描述: 硅P通道功率MOS FET性(P溝道功率MOSFET的)
文件頁(yè)數(shù): 4/8頁(yè)
文件大?。?/td> 139K
代理商: HAT1021R
HAT1021R
4
–0.5
–0.4
–0.3
–0.2
–0.1
0
–2
–4
–6
–8
–10
I = –5 A
–1 A
–2 A
1
0.2
0.5
0.1
0.02
0.05
0.01
–20
–0.2
–0.5
–1
–2
–5
–10
0.20
0.16
0.12
0.08
0.04
–40
0
40
80
120
160
0
20
10
2
5
1
50
0.5
–0.2
–0.5
–1
–2
–5
–10 –20
–4 V
V = –2.5 V
I = –5 A
–1 A, –2 A, –5 A
–1 A, –2 A
–4 V
V = –2.5 V
Tc = –25 °C
75 °C
25 °C
Gate to Source Voltage V (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
D
D
Drain Current I (A)
D
R
D
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature Tc (°C)
R
D
S
Static Drain to Source on State Resistance
vs. Temperature
F
f
Forward Transfer Admittance vs.
Drain Current
Drain Current I (A)
Pulse Test
V = –10 V
Pulse Test
Pulse Test
Pulse Test
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參數(shù)描述
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