參數(shù)資料
型號: HAT1021R
廠商: Hitachi,Ltd.
英文描述: Silicon P Channel Power MOS FET(P溝道功率MOSFET)
中文描述: 硅P通道功率MOS FET性(P溝道功率MOSFET的)
文件頁數(shù): 2/8頁
文件大?。?/td> 139K
代理商: HAT1021R
HAT1021R
2
Note: 1. PW
10
μ
s, duty cycle
1 %
When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
10s
Electrical Characteristics (Ta = 25
°
C)
Note: 3. Pulse test
Channel dissipation
Channel temperature
Storage temperature
Pch
Note2
Tch
Tstg
2.5
150
–55 to +150
W
°
C
°
C
Item
Drain to source breakdown voltage V
(BR)DS
Symbol Min
Typ
Max
Unit
V
Test Conditions
I
D
= – 10 mA, V
GS
= 0
S
– 20
Gate to source breakdown voltage V
(BR)GS
S
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
±
10
V
I
G
=
±
100
μ
A, V
DS
= 0
Gate to source leak current
Zero gate voltege drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
– 0.5
0.048
0.065
±
10
– 10
– 1.5
0.060
0.085
μ
A
μ
A
V
V
GS
=
±
8 V, V
DS
= 0
V
DS
= – 20 V, V
GS
= 0
V
DS
= –10 V,
I
D
= – 1 mA
I
D
= – 3 A, V
GS
= – 4 V
Note3
I
= – 3 A, V
GS
= – 2.5 V
D
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
6
9.5
1200
630
200
20
120
175
140
– 0.9
65
– 1.4
S
pF
pF
pF
ns
ns
ns
ns
V
ns
I
D
= – 3 A, V
DS
= – 10 V
Note3
V
DS
= – 10 V
V
GS
= 0
f = 1MHz
V
GS
= – 4 V, I
D
= – 3 A
V
DD
@ – 10 V
IF = – 5.5 A, V
GS
= 0
Note3
IF = – 5.5 A, V
GS
= 0
diF/ dt = 20 A/
μ
s
Item
Symbol
Ratings
Unit
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