參數(shù)資料
型號: HAT1020R
廠商: Hitachi,Ltd.
英文描述: Silicon P-Channel Power MOS FET(P溝道功率MOSFET)
中文描述: 硅P溝道功率MOS FET性(P溝道功率MOSFET的)
文件頁數(shù): 5/8頁
文件大?。?/td> 118K
代理商: HAT1020R
HAT1020R
5
Reverse Drain Current I (A)
R
Body–Drain Diode Reverse
Recovery Time
–0.2
–0.5
–1
–2
–5
–10 –20
500
200
100
20
50
10
5
di / dt = 20 A / μs
V = 0, Ta = 25 °C
0
–10
–20
–30
-40
–50
C
Drain to Source Voltage V (V)
Typical Capacitance vs.
Drain to Source Voltage
10000
3000
1000
300
100
30
10
Ciss
Coss
Crss
V = 0
f = 1 MHz
0
–10
–20
–30
–40
0
Gate Charge Qg (nc)
D
D
0
–4
–8
–12
–16
–20
40
–50
G
G
Dynamic Input Characteristics
8
16
24
32
DS
V
GS
V
V = –5 V
–10 V
–25 V
V = –25 V
–10 V
–5 V
I = –5 A
500
200
100
20
50
10
5
–0.1
–0.2
–0.5
–1
–2
–5
–10
tf
r
d(off)
t
d(on)
t
V = –4 V, V = –10 V
PW = 3 μs, duty < 1 %
Drain Current I (A)
S
Switching Characteristics
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