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參數(shù)資料
| 型號： | HAT1020R |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon P-Channel Power MOS FET(P溝道功率MOSFET) |
| 中文描述： | 硅P溝道功率MOS FET性（P溝道功率MOSFET的） |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 118K |
| 代理商： | HAT1020R |
HAT1020R
2
Absolute Maximum Ratings (Ta = 25
°
C)
Note:
1.PW
≤
10
μ
s, duty cycle
≤
1 %
When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
≤
10s
Electrical Characteristics (Ta = 25
°
C)
Note:
3.Pulse test
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body–drain diode reverse drain current I
DR
Channel dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)Note1
Ratings
– 30
±
20
– 5
– 40
– 5
2.5
150
–55 to +150
Unit
V
V
A
A
A
W
°
C
°
C
Pch
Note2
Tch
Tstg
Item
Drain to source breakdown voltage V
(BR)DS
Symbol Min
Typ
—
Max
—
Unit
V
Test Conditions
I
D
= –10 mA, V
GS
= 0
S
– 30
Gate to source breakdown voltage V
(BR)GS
S
I
GSS
I
DSS
V
GS(off)
R
DS(on)
±
20
—
—
V
I
G
=
±
100
μ
A, V
DS
= 0
Gate to source leak current
Zero gate voltege drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
—
—
– 1.0
—
—
—
—
0.04
±
10
–10
– 2.5
0.07
μ
A
μ
A
V
V
GS
=
±
16 V, V
DS
= 0
V
DS
= –30 V, V
GS
= 0
V
DS
= –10 V,
I
D
= – 1 mA
I
= – 3 A, V
GS
= – 10 V
D
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
—
5.0
—
—
—
—
—
—
—
—
—
0.07
7.5
860
560
165
30
170
40
65
– 0.9
55
0.13
—
—
—
—
—
—
—
—
– 1.4
—
S
pF
pF
pF
ns
ns
ns
ns
V
ns
I
D
= – 3 A, V
GS
= – 4 V
Note3
I
D
= – 3 A, V
DS
= – 10 V
Note3
V
DS
= – 10 V
V
GS
= 0
f = 1MHz
V
GS
= – 4 V, I
D
= – 3 A
V
DD
@ – 10 V
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
IF = – 5 A, V
GS
= 0
Note3
IF = – 5 A, V
GS
= 0
diF/ dt = 20 A/
μ
s
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