參數(shù)資料
型號: HAL805
廠商: MICRONAS SEMICONDUCTOR HOLDING AG
英文描述: Programmable Linear Hall Effect Sensor
中文描述: 可編程線性霍爾效應(yīng)傳感器
文件頁數(shù): 12/24頁
文件大?。?/td> 373K
代理商: HAL805
HAL805
PRELIMINARY DATA SHEET
12
Micronas
3.4. Absolute Maximum Ratings
Stresses beyond those listed in the
Absolute Maximum Ratings
may cause permanent damage to the device. This
is a stress rating only. Functional operation of the device at these or any other conditions beyond those indicated in
the
Recommended Operating Conditions/Characteristics
of this specification is not implied. Exposure to absolute
maximum ratings conditions for extended periods may affect device reliability.
3.5. Recommended Operating Conditions
Symbol
Parameter
Pin No.
Min.
Max.
Unit
V
DD
Supply Voltage
1
8.5
8.5
V
V
DD
Supply Voltage
1
14.4
1) 2)
14.4
1) 2)
V
I
DD
Reverse Supply Current
1
50
1)
mA
I
Z
Current through Protection Device
1 or 3
300
4)
300
4)
mA
V
OUT
Output Voltage
3
5
6)
5
6)
8.5
3)
14.4
3) 2)
V
V
OUT
V
DD
Excess of Output Voltage
over Supply Voltage
3,1
2
V
I
OUT
Continuous Output Current
3
10
10
mA
t
Sh
Output Short Circuit Duration
3
10
min
T
S
Storage Temperature Range
65
150
°
C
T
J
Junction Temperature Range
40
40
170
5)
150
°
C
°
C
1)
as long as T
Jmax
is not exceeded
2)
t < 10 min (V
DDmin
=
15 V for t < 1 min, V
DDmax
= 16 V for t < 1 min)
3)
as long as T
Jmax
is not exceeded, output is not protected to external 14 V-line (or to
14 V)
4)
t < 2 ms
5)
t < 1000h
6)
internal protection resistor = 100
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
V
DD
Supply Voltage
1
4.5
5
5.5
V
I
OUT
Continuous Output Current
3
1
1
mA
R
L
Load Resistor
3
4.5
k
C
L
Load Capacitance
3
0.33
10
1000
nF
相關(guān)PDF資料
PDF描述
HAL805UT-A Programmable Linear Hall Effect Sensor
HAL805UT-E Programmable Linear Hall Effect Sensor
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