參數(shù)資料
型號: HAL800UT-E
廠商: MICRONAS SEMICONDUCTOR HOLDING AG
元件分類: 磁阻傳感器
英文描述: Programmable Linear Hall Effect Sensor
中文描述: MAGNETIC FIELD SENSOR-HALL EFFECT, -1-1mT, 0.35-4.80V, RECTANGULAR, THROUGH HOLE MOUNT
封裝: PLASTIC, TO-92UT, 3 PIN
文件頁數(shù): 14/24頁
文件大?。?/td> 347K
代理商: HAL800UT-E
HAL800
14
Micronas
3.7. Magnetic Characteristics
at T
J
=
40
°
C to +170
°
C, V
DD
= 4.5 V to 5.5 V, after programming, as not otherwise specified in Conditions.
Typical Characteristics for T
J
= 25
°
C and V
DD
= 5 V.
3.8. Typical Characteristics
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Test Conditions
B
Offset
Magnetic Offset
3
1
0
1
mT
B = 0 mT, I
OUT
= 0 mA, T
J
= 25
°
C
B
Offset
/
T
Magnetic Offset Change
due to T
J
15
0
15
μ
T/K
B = 0 mT, I
OUT
= 0 mA
B
Hysteresis
Magnetic Hysteresis
20
0
20
μ
T
Range = 30 mT, Filter = 500 Hz
SR
Magnetic Slew Rate
3
12
50
mT/ms
Filter frequency = 500 Hz
Filter frequency = 2 kHz
n
meff
Magnetic RMS Broadband
Noise
3
10
μ
T
BW = 10 Hz to 2 kHz
f
Cflicker
Corner Frequency of 1/f Noise
3
20
Hz
B = 0 mT
f
Cflicker
Corner Frequency of 1/frms
Noise
3
100
Hz
B = 65 mT, T
J
= 25
°
C
20
15
10
5
0
5
10
15
20
15
10
5
0
5
10
15
20 V
mA
V
DD
I
DD
T
A
=
40
°
C
T
A
= 25
°
C
T
A
=150
°
C
Fig. 3
2:
Typical current consumption
versus supply voltage
0
50
2
4
6
8
10
0
50
100
150
200
°
C
mA
T
A
I
DD
V
DD
= 5 V
Fig. 3
3:
Typical current consumption
versus ambient temperature
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