參數(shù)資料
型號: HAL800UT-A
廠商: MICRONAS SEMICONDUCTOR HOLDING AG
英文描述: Programmable Linear Hall Effect Sensor
中文描述: 可編程線性霍爾效應(yīng)傳感器
文件頁數(shù): 17/24頁
文件大小: 347K
代理商: HAL800UT-A
HAL800
Micronas
17
4. Application Notes
4.1. Application Circuit
For EMC protection, it is recommended to add each a
ceramic 4.7 nF capacitor between ground and the sup-
ply voltage respectively the output voltage pin. In addi-
tion, the input of the controller unit should be pulled-
down with a 4.7 kOhm resistor and a ceramic 4.7 nF
capacitor.
Please note that during programming, the sensor will
be supplied repeatedly with the programming voltage
of 12 V for 100 ms. All components connected to the
V
DD
line at this time must be able to resist this voltage.
Fig. 4
1:
Recommended application circuit
4.2. Temperature Compensation
The relation between the temperature coefficient of the
magnet and the corresponding TC and TCSQ codes
for a linear compensation is given in the following
table. In addition to the linear change of the magnetic
field with temperature, the curvature can be adjusted,
too. For that purpose, TC and TCSQ have to be
changed to combinations that are not given in the
table. Please contact Micronas for more detailed infor-
mation.
Temperature
Coefficient of
Magnet (ppm/K)
TC
TCSQ
700
29
8
600
26
9
500
23
9
400
21
9
300
18
9
200
16
9
100
14
10
OUT
V
DD
GND
4.7 nF
HAL800
4.7 k
μ
C
4.7 nF
4.7 nF
0
11
10
100
8
10
200
6
11
300
4
11
400
3
12
500
1
12
600
1
13
700
3
13
800
5
14
900
6
14
1000
8
15
1100
9
15
1200
11
16
1300
13
17
1400
14
17
1500
15
18
1600
17
18
1700
18
18
1800
19
19
1900
20
19
2000
22
20
2100
23
21
2200
24
21
2300
25
22
2400
26
22
2500
27
23
2600
28
23
2700
29
24
2800
30
24
2900
31
26
Temperature
Coefficient of
Magnet (ppm/K)
TC
TCSQ
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