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參數(shù)資料
| 型號： | HAL710SF-K |
| 廠商： | Electronic Theatre Controls, Inc. |
| 元件分類： | 霍爾效應傳感器 |
| 英文描述： | Chip-on-Glass (COG) Technology, 16 Characters x 2 Lines |
| 中文描述： | 霍爾效應的方向檢測傳感器 |
| 文件頁數(shù)： | 9/12頁 |
| 文件大?。?/td> | 165K |
| 代理商： | HAL710SF-K |
ADVANCE INFORMATION
HAL710
Micronas
9
3.6. Electrical Characteristics
at T
J
=
40
°
C to +140
°
C, V
DD
= 3.8 V to 24 V, as not otherwise specified in Conditions.
Typical Characteristics for T
J
= 25
°
C and V
DD
= 5 V.
Fig. 3
–
2:
Recommended pad size for SOT-89B
Dimensions in mm
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Conditions
I
DD
Supply Current
1
2
5.5
9
mA
T
J
= 25
°
C
I
DD
Supply Current
over Temperature Range
1
7
10
mA
V
DDZ
Overvoltage Protection
at Supply
1
28.5
32
V
I
DD
= 25 mA, T
J
= 25
°
C, t = 20 ms
V
OZ
Overvoltage Protection
at Output
2,3
28
32
V
I
OH
= 25 mA, T
J
= 25
°
C, t = 20 ms
V
OL
Output Voltage
2,3
130
280
mV
I
OL
= 10 mA, T
J
= 25
°
C
V
OL
Output Voltage over
Temperature Range
2,3
130
400
mV
I
OL
= 10 mA,
I
OH
Output Leakage Current
2,3
0.06
0.1
μ
A
Output switched off, T
J
= 25
°
C,
V
OH
= 3.8 V to 24 V
I
OH
Output Leakage Current over
Temperature Range
2,3
10
μ
A
Output switched off, T
J
≤
140
°
C,
V
OH
= 3.8 V to 24 V
f
osc
Internal sampling frequency
130
150
kHz
T
J
= 25
°
C
f
osc
Internal sampling frequency
over Temperature Range
100
150
kHz
t
en
(O)
Enable Time of Output after
Setting of V
DD
50
100
μ
s
V
DD
= 12 V,
B>B
on
+ 2 mT or B<B
off
2 mT
t
r
Output Rise Time
2,3
1.2
μ
s
V
DD
= 12 V, R
L
= 20 k
,
C
L
= 20 pF
t
f
Output FallTime
2,3
0.2
1.6
μ
s
V
DD
= 12 V, R
L
= 20 k
,
C
L
= 20 pF
R
thSB
SOT-89B
Thermal Resistance Junction to
Substrate Backside
150
200
K/W
Fiberglass Substrate
30 mm x 10mm x 1.5mm,
pad size see Fig. 3
–
2
5.0
2.0
2.0
1.0
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