參數(shù)資料
型號(hào): HAL566SF-K
廠商: MICRONAS SEMICONDUCTOR HOLDING AG
元件分類: 磁阻傳感器
英文描述: Two-Wire Hall Effect Sensor Family
中文描述: MAGNETIC FIELD SENSOR-HALL EFFECT, 2-7.4mT, RECTANGULAR, SURFACE MOUNT
封裝: PLASTIC, SOT-89B, 4 PIN
文件頁(yè)數(shù): 8/21頁(yè)
文件大?。?/td> 231K
代理商: HAL566SF-K
HAL55x, HAL56x
8
Micronas
3.6. Electrical Characteristics
at T
J
= –40
°
C to +170
°
C , V
DD
= 4 V to 24 V, as not otherwise specified in Conditions
Typical Characteristics for T
J
= 25
°
C and V
DD
= 12 V
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Conditions
I
DDlow
Low Current Consumption
over Temperature Range
1
2
3.3
5
mA
I
DDhigh
High Current Consumption
over Temperature Range
1
12
14.3
17
mA
V
DDZ
Overvoltage Protection
at Supply
1
28.5
32
V
I
DD
= 25 mA,
T
J
= 25
°
C,
t = 20 ms
f
osc
Internal Oscillator
Chopper Frequency
90
145
kHz
T
J
= 25
°
C
f
osc
Internal Oscillator Chopper Fre-
quency over Temperature Range
75
145
kHz
t
en(O)
Enable Time of Output after
Setting of V
DD
1
20
30
μ
s
1)
t
r
Output Rise Time
1
0.4
1.6
μ
s
V
DD
= 12 V, R
s
= 30
t
f
Output Fall Time
1
0.4
1.6
μ
s
V
DD
= 12 V, R
s
= 30
R
thJSB
case
SOT-89B
Thermal Resistance Junction
to Substrate Backside
150
200
K/W
Fiberglass Substrate
30 mm x 10 mm x 1.5mm,
pad size see Fig. 3–3
R
thJA
case
TO-92UA
Thermal Resistance Junction
to Soldering Point
150
200
K/W
1)
B > B
ON
+ 2 mT or B < B
OFF
– 2 mT for HAL55x, B > B
OFF
+ 2 mT or B < B
ON
– 2 mT for HAL56x
Fig. 3–3:
Recommended pad size SOT-89B
Dimensions in mm
5.0
2.0
2.0
1.0
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