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參數(shù)資料
| 型號： | HAL566SF-K |
| 廠商： | MICRONAS SEMICONDUCTOR HOLDING AG |
| 元件分類： | 磁阻傳感器 |
| 英文描述： | Two-Wire Hall Effect Sensor Family |
| 中文描述： | MAGNETIC FIELD SENSOR-HALL EFFECT, 2-7.4mT, RECTANGULAR, SURFACE MOUNT |
| 封裝： | PLASTIC, SOT-89B, 4 PIN |
| 文件頁數(shù)： | 7/21頁 |
| 文件大小： | 231K |
| 代理商： | HAL566SF-K |
HAL55x, HAL56x
7
Micronas
3.4. Absolute Maximum Ratings
Symbol
Parameter
Pin No.
Min.
Max.
Unit
V
DD
Supply Voltage
1
–15
1) 2)
28
2)
V
I
DDZ
Supply Current through
Protection Device
1
–50
2)
–200
3)
50
2)
200
3)
mA
mA
T
S
Storage Temperature Range
–65
150
°
C
T
J
Junction Temperature Range
–40
–40
150
170
4)
°
C
1)
–18 V with a 100
series resistor at pin 1 (–16 V with a 30
series resistor)
2)
as long as T
J
max
is not exceeded
2)
with a 220
series resistance at pin 1 corresponding to test circuit 1 (see Fig. 5–3)
3)
t<2 ms
4)
t<1000 h
Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This
is a stress rating only. Functional operation of the device at these or any other conditions beyond those indicated in the
“Recommended Operating Conditions/Characteristics” of this specification is not implied. Exposure to absolute maxi-
mum ratings conditions for extended periods may affect device reliability.
3.5. Recommended Operating Conditions
Symbol
Parameter
Pin No.
Min.
Max.
Unit
V
DD
Supply Voltage
1
4
24
V
T
A
Ambient Temperature for continuos
operation
–40
–40
85
1)
125
2)
°
C
°
C
t
on
Supply Time for pulsed mode
30
–
μ
s
1)
when using the “A” type or the ”K” type and V
DD
≤
16 V
2)
when using the “A” type and V
DD
≤
13.2 V
Note:
Due to the high power dissipation at high current consumption, there is a difference between the ambient temper-
ature (T
A
) and junction temperature. The power dissipation can be reduced by repeatedly switching the supply voltage
on and off (pulse mode). Please refer to section 5.4. on page 19 for details.
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