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參數(shù)資料
| 型號： | HAL525SF-A |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Hall Effect Sensor IC |
| 中文描述： | 霍爾效應(yīng)傳感器IC |
| 文件頁數(shù)： | 8/21頁 |
| 文件大?。?/td> | 292K |
| 代理商： | HAL525SF-A |
HAL525, HAL535
8
Micronas
3.6. Electrical Characteristics
at T
J
=
40
°
C to +170
°
C , V
DD
= 3.8 V to 24 V, as not otherwise specified in Conditions.
Typical Characteristics for T
J
= 25
°
C and V
DD
= 12 V
Fig. 3–3:
Recommended pad size SOT-89B
Dimensions in mm
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Conditions
I
DD
Supply Current
1
2.3
3
4.2
mA
J
= 25
°
C
I
DD
Supply Current over
Temperature Range
1
1.6
3
5.2
mA
V
DDZ
Overvoltage Protection
at Supply
1
28.5
32
V
I
= 25 mA,
T
J
= 25
°
C,
t = 20 ms
V
OZ
Overvoltage Protection at Output
3
28
32
V
I
= 25 mA,
T
J
= 25
°
C,
t = 20 ms
V
OL
Output Voltage
3
130
280
mV
I
OL
= 20 mA, T
J
= 25
°
C
V
OL
Output Voltage over
Temperature Range
3
130
400
mV
I
OL
= 20 mA
I
OH
Output Leakage Current
3
0.06
0.1
μ
A
Output switched off,
T
J
= 25
°
C, V
OH
= 3.8 to 24 V
I
OH
Output Leakage Current over
Temperature Range
3
10
μ
A
Output switched off,
T
J
≤
150
°
C, V
OH
= 3.8 to 24V
f
osc
Internal Oscillator
Chopper Frequency
95
115
kHz
T
J
= 25
°
C,
f
osc
Internal Oscillator Chopper
Frequency over Temperature
Range
85
115
kHz
T
J
=
30
°
C to 100
°
C
f
osc
Internal Oscillator Chopper
Frequency over Temperature
Range
73
115
kHz
t
en(O)
Enable Time of Output after
Setting of V
DD
1
30
70
μ
s
V
= 12 V
B > B
ON
+ 2 mT or
B < B
OFF
2 mT
t
r
Output Rise Time
3
75
400
ns
V
DD
= 12 V,
R
L
= 820 Ohm,
C
L
= 20 pF
t
f
Output Fall Time
3
50
400
ns
R
case
SOT-89B
Thermal Resistance Junction
to Substrate Backside
150
200
K/W
Fiberglass Substrate
30 mm x 10 mm x 1.5 mm,
pad size (see Fig. 3–3)
R
case
TO-92UA
Thermal Resistance Junction
to Soldering Point
150
200
K/W
5.0
2.0
2.0
1.0
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