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參數(shù)資料
| 型號(hào)： | H5N5007P |
| 文件頁(yè)數(shù)： | 6/10頁(yè) |
| 文件大?。?/td> | 49K |
| 代理商： | H5N5007P |
H5N5001FM
6
0.1
0.3
1
3
10
30
100
1000
200
500
100
20
50
10
di / dt = 100 A / μs
V = 0, Ta = 25 °C
0
50
100
150
200
250
2000
5000
1000
100
200
500
1000
800
600
400
200
0
20
16
12
8
4
10
Gate Charge Qg (nC)
20
30
40
50
0
1000
200
500
100
20
10
50
0.1
0.3
1
3
10
30
100
20
50
10
5
V = 0
f = 1 MHz
Ciss
Coss
Crss
V = 400 V
250 V
100 V
I = 5 A
V
DS
V
GS
r
d(on)
t
d(off)
t
tf
V = 10 V, V = 250 V
PW = 10 μs, duty < 1 %
R =10
V = 100 V
250 V
400 V
Reverse Drain Current I (A)
R
Body–Drain Diode Reverse
Recovery Time
C
Drain to Source Voltage V (V)
Typical Capacitance vs.
Drain to Source Voltage
D
D
G
G
Dynamic Input Characteristics
Drain Current I (A)
S
Switching Characteristics
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| H5N5007P-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 500V 25A 3-Pin(3+Tab) TO-3P |
| H5N5011PL(E) | 制造商:Renesas Electronics Corporation 功能描述: |
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| H5N5012P-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H5N5015P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
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