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參數(shù)資料
| 型號(hào)： | H5N5007P |
| 文件頁(yè)數(shù)： | 2/10頁(yè) |
| 文件大小： | 49K |
| 代理商： | H5N5007P |
H5N5001FM
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
I
DR(pulse)
500
V
Gate to source voltage
±
30
V
Drain current
5
A
Drain peak current
Note1
20
A
Body-drain diode reverse drain current
5
A
Body-drain diode reverse drain peak
current
Note1
20
A
Avalanche current
I
AP
Pch
Note2
Note3
5
A
Channel dissipation
30
W
Channel to case Thermal Impedance
θ
ch-c
4.17
°
C/W
°
C
°
C
Channel temperature
Tch
150
Storage temperature
1. PW
≤
10
μ
s, duty cycle
≤
1 %
2. Value at Tc = 25
°
C
3. Tch
≤
150
°
C
Tstg
–55 to +150
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| H5N5007P-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 500V 25A 3-Pin(3+Tab) TO-3P |
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| H5N5015P | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述: |
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