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參數(shù)資料
| 型號： | H5N3004P |
| 文件頁數(shù)： | 6/10頁 |
| 文件大?。?/td> | 91K |
| 代理商： | H5N3004P |
H5N3004P
Rev.0, Apr. 2002, page 6 of 10
0.1
0.3
Reverse Drain Current I
DR
(A)
1
3
10
30
100
1000
200
500
100
20
50
10
0
25
50
75
100
125
20000
50000
10000
1000
2000
5000
500
400
300
200
100
0
20
16
12
8
4
40
80
120
160
200
0
10000
1000
10
100
0.1
0.3
1
3
10
30
100
200
500
100
50
V = 0
f = 1 MHz
Ciss
Coss
Crss
I = 25 A
V
DS
V
GS
R
Body-Drain Diode Reverse
Recovery Time
C
Drain to Source Voltage V
DS
(V)
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nC)
D
D
G
G
Dynamic Input Characteristics
Drain Current I
D
(A)
S
Switching Characteristics
di / dt = 100 A /
μ
s
V = 0, Ta = 25
°
C
V = 50 V
100 V
240 V
V = 240 V
100 V
50 V
r
d(on)
t
d(off)
t
tf
V = 10 V, V =
PW = 10
μ
s, duty < 1 %
R =10
r
tf
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| H5N3004P_05 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H5N3004P-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H5N3005LD | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H5N3005LM | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H5N3005LS | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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