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參數(shù)資料
| 型號(hào)： | H5N3007CF |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道場(chǎng)效應(yīng)晶體管高速電源開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 82K |
| 代理商： | H5N3007CF |
Rev.1.00, Nov.11.2004, page 1 of 3
H5N3007CF
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G0473-0100
Rev.1.00
Nov.11.2004
Features
Low on-resistance
Low leakage current
High Speed Switching
Built-in fast recovery diode
Outline
TO-220CFM
D
G
S
1. Gate
2. Drain
3. Source
1
2
3
Absolute Maximum Ratings
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
W
°
C/W
°
C
°
C
Item
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
I
DR(pulse)
I
AP
Pch
Note 2
θ
ch-c
Tch
Tstg
Ratings
300
±
30
15
60
15
60
15
35
3.57
150
–55 to +150
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Channel dissipation
Channel to case Thermal Impedance
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
μ
s, duty cycle
≤
1%
2. Value at Tc = 25
°
C
3. Tch
≤
150
°
C
Note 1
Note 1
Note 3
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