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參數(shù)資料
| 型號(hào)： | H5N3003 |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道場(chǎng)效應(yīng)晶體管高速電源開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 6/10頁(yè) |
| 文件大?。?/td> | 133K |
| 代理商： | H5N3003 |
H5N3003P
Rev.2.00, Aug.01.2003, page 6 of 9
S
Drain Current I
D
(A)
Switching Characteristics
Typical Capacitance vs.
Drain to Source Voltage
C
Drain to Source Voltage V
DS
(V)
0.1
0.3
1
3
10
30
100
1000
200
500
100
20
50
10
0
20
40
60
80
100
20000
50000
10000
1000
2000
5000
500
400
300
200
100
0
20
16
12
8
4
40
Gate Charge Qg (nC)
80
120
160
200
0
10000
1000
10
100
0.1
0.3
1
3
10
30
100
200
500
100
50
V = 50 V
100 V
240 V
V = 0
f = 1 MHz
Ciss
Coss
Crss
I = 40 A
V
DD
V
GS
Body-Drain Diode Reverse
Recovery Time
di / dt = 100 A / μs
V = 0, Ta = 25
°
C
V = 240 V
100 V
50 V
r
d(on)
t
d(off)
t
tf
V = 10 V, V = 150 V
PW = 10
μ
s, duty < 1 %
R =10
tf
r
Reverse Drain Current I
DR
(A)
R
D
D
G
G
Dynamic Input Characteristics
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| H5N3003P | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H5N3004P | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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| H5N3004P-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| H5N3005LD | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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