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參數(shù)資料
| 型號： | H11D1W |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 光電耦合器 |
| 英文描述： | HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS |
| 中文描述： | 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER |
| 封裝： | LEAD FREE, DIP-6 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 282K |
| 代理商： | H11D1W |
2
Motorola Optoelectronics Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)(1)
Characteristic
Symbol
Min
Typ
(1)
Max
Unit
INPUT LED
(TA = 25
°
C unless otherwise noted)
Reverse Leakage Current
(VR = 6 V)
IR
—
—
10
μ
A
Forward Voltage
(IF = 10 mA)
VF
—
1.2
1.5
Volts
Capacitance
(V = 0 V, f = 1 MHz)
C
—
18
—
pF
OUTPUT TRANSISTOR
(TA = 25
°
C and IF = 0 unless otherwise noted)
Collector–Emitter Dark Current (RBE = 1 M
)
(VCE = 200 V, TA = 25
°
C)
(TA = 100
°
C)
H11D1,2
H11D1,2
ICER
—
—
—
—
100
250
nA
μ
A
Collector–Base Breakdown Voltage
(IC = 100
μ
A)
H11D1,2
V(BR)CBO
—
—
300
Volts
Collector–Emitter Breakdown Voltage
(IC = 1 mA, RBE = 1 M
)
H11D1,2
V(BR)CER
—
—
300
Volts
Emitter–Base Breakdown Voltage
(IE = 100
μ
A)
V(BR)EBO
7
—
—
Volts
COUPLED
(TA = 25
°
C unless otherwise noted)
Output Collector Current
(VCE = 10 V, IF = 10 mA, RBE = 1 M
)
Surge Isolation Voltage (Input to Output)(3)
Peak ac Voltage, 60 Hz, 1 sec
H11D1,2
IC (CTR)(2)
2 (20)
—
—
mA (%)
VISO
7500
—
—
Vac(pk)
Isolation Resistance(3)
(V = 500 V)
RISO
—
1011
—
Ohms
Collector–Emitter Saturation Voltage
(IC = 0.5 mA, IF = 10 mA, RBE = 1 M
)
Isolation Capacitance(3)
(V = 0, f = 1 MHz)
VCE(sat)
—
—
0.4
Volts
CISO
—
0.2
—
pF
Turn–On Time
VCC = 10 V, IC = 2 mA, RL = 100
ton
toff
—
5
—
μ
s
Turn–Off Time
—
5
—
1. Always design to the specified minimum/maximum electrical limits (where applicable).
2. Current Transfer Ratio (CTR) = IC/IF x 100%.
3. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
I
Figure 1. Output Current versus LED Input Current
1
–60
Figure 2. Output Current versus Temperature
–40
–20
TA, AMBIENT TEMPERATURE (
°
C)
C
I
0
20
40
60
80
100
0.1
IF, LED INPUT CURRENT (mA)
RBE = 106
VCE = 10 V
TA = 25
°
C
1
0.2
0.5
1
2
5
10
20
50
2
5
10
20
50
2
5
10
20
RBE = 106
VCE = 10 V
IF = 20 mA
IF = 10 mA
IF = 5 mA
TYPICAL CHARACTERISTICS
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| H11D1X | 制造商:Isocom Components 功能描述:OPTOCOUPLER DIP-6 HV TR. O/P 制造商:Isocom Components 功能描述:OPTOCOUPLER, DIP-6, HV, TR. O/P |
| H11D1-X007 | 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR > 20% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| H11D1-X007T | 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR > 20% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| H11D1-X009 | 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR > 20% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| H11D1-X009T | 功能描述:晶體管輸出光電耦合器 Phototransistor Out Single CTR > 20% RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
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