參數(shù)資料
型號: H11G3.W
英文描述: DARLINGTON-NPN-OUTPUT DC-INPUT OPTOCOUPLER
中文描述: 達林頓- npn型輸出DC -輸入光耦合器
文件頁數(shù): 1/6頁
文件大小: 133K
代理商: H11G3.W
ABSOLUTE MAXIMUM RATINGS
Parameter
TOTAL DEVICE
Storage Temperature
Operating Temperature
Lead Solder Temperature
Total Device Power Dissipation @ T
A
= 25°C
Derate above 25°C
Input-Output Isolation Voltage
EMITTER
Forward Input Current
Reverse Input Voltage
Forward Current - Peak (1μs pulse, 300pps)
LED Power Dissipation @ T
A
= 25°C
Derate above 25°C
DETECTOR
Collector-Emitter Voltage
H11G1
H11G2
H11G3
Detector Power Dissipation @ T
A
= 25°C
Derate above 25°C
Symbol
Value
Units
T
STG
-55 to +150
°C
T
OPR
T
SOL
-55 to +100
260 for 10 sec
260
3.5
5300
°C
°C
mW
mW/°C
Vac(rms)
P
D
V
ISO
I
F
60
mA
V
R
6.0
3.0
100
1.8
V
A
I
F
(pk)
P
D
mW
mW/°C
V
CEO
100
80
55
200
2.67
V
P
D
mW
mW/°C
FEATURES
High BV
CEO
- Minimum 100 V for H11G1
- Minimum 80 V for H11G2
- Minimum 55 V for H11G3
High sensitivity to low input current
Minimum 500 percent CTR at I
F
= 1 mA
Low leakage current at elevated temperature
(maximum 100 μA at 80°C)
Underwriters Laboratory (UL) recognized File# E90700
DESCRIPTION
The H11GX series are photodarlington-type optically coupled optocouplers. These devices have a
gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor
which has an integral base-emitter resistor to optimize elevated temperature characteristics.
7/21/00 200045A
EMITTER
COLLECTOR
1
2
3
ANODE
CATHODE
4
5
6 BASE
N/C
HIGH VOLTAGE
PHOTODARLINGTON OPTOCOUPLERS
H11G1
H11G2
H11G3
APPLICATIONS
CMOS logic interface
Telephone ring detector
Low input TTL interface
Power supply isolation
Replace pulse transformer
NOTE
All dimensions are in inches (millimeters)
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