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參數(shù)資料
| 型號： | GTS6923 |
| 廠商： | GTM CORPORATION |
| 英文描述： | P-CHANNEL WITH SCHOTTKY DIODE POWER MOSFET |
| 中文描述： | 的P -肖特基二極管功率MOSFET通道 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 354K |
| 代理商： | GTS6923 |
GTS6923
Page: 1/4
ISSUED DATE :2006/05/04
REVISED DATE :
G
G T
T S
S 66992233
P-CHANNEL WITH SCHOTTKY DIODE POWER MOSFET
Description
The GTS6923 provides the designer with the best combination of fast switching, ultra low on-resistance and
cost-effectiveness.
Features
*Low on-resistance
*Fast Switch Characteristic
*Included Schottky Diode
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
-
1.20
E
6.20
6.60
A1
0.05
0.15
E1
4.30
4.50
b
0.19
0.30
e
0.65 BSC
c
0.09
0.20
L
0.45
0.75
D
2.90
3.10
S
0°
8°
Absolute Maximum Ratings
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage (MOSFET and Schottky)
VDS
-20
V
Reverse Voltage (Schottky)
VKA
20
V
Gate-Source Voltage (MOSFET)
VGS
±12
V
Continuous Drain Current3 (MOSFET)
ID @Ta=25 :
-3.5
A
Continuous Drain Current3 (MOSFET)
ID @Ta=70 :
-2.8
A
Pulsed Drain Current1 (MOSFET)
IDM
-30
A
Average Forward Current (Schottky)
IF
1
A
Pulsed Forward Current1 (Schottky)
IFM
25
A
Total Power Dissipation (MOSFET)
1
W
Total Power Dissipation (Schottky)
PD @Ta=25 :
1
W
Storage Temperature Range
Tstg
-55 ~ +150
:
Operating Junction Temperature Range
Tj
-55 ~ +125
:
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance Junction-ambient3 (MOSFET)
Max.
Thermal Resistance Junction-ambient3 (Schottky)
Max.
Rthj-a
125
/
: W
BVDSS
-20V
RDS(ON)
50m
ID
-3.5A
Pb Free Plating Product
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