參數(shù)資料
型號: GSMBT9015
廠商: GTM CORPORATION
英文描述: PNP EPITAXIAL PLANAR TRANSISTOR
中文描述: 進(jìn)步黨外延平面晶體管
文件頁數(shù): 1/2頁
文件大小: 202K
代理商: GSMBT9015
1/2
ISSUED DATE :2004/12/20
REVISED DATE :
G
G S
S M
M B
B T
T 99001155
P
P N
N P
P E
E P
P II T
T A
A X
X II A
A L
L P
P L
L A
A N
N A
A R
R T
T R
R A
A N
N S
S II S
S T
T O
O R
R
Description
The GSMBT9015 is designed for use in pre-amplifier of low level and low noise.
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
0.80
1.10
L1
0.42 REF.
A1
0
0.10
L
0.15
0.35
A2
0.80
1.00
b
0.25
0.40
D
1.80
2.20
c
0.10
0.25
E
1.15
1.35
e
0.65 REF.
HE
1.80
2.40
Q1
0.15 BSC.
Absolute Maximum Ratings at Ta = 25 ::::
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
Storage Temperature
Tstg
-55 ~ +150
Collector to Base Voltage
VCBO
-50
V
Collector to Emitter Voltage
VCEO
-45
V
Emitter to Base Voltage
VEBO
-5
V
Collector Current
IC
-100
mA
Total Power Dissipation
PD
225
mW
Characteristics at Ta = 25 ::::
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
-50
-
V
IC=-100uA , IE=0
BVCEO
-45
-
V
IC=-1mA, IB=0
BVEBO
-5
-
V
IE=-100uA, IC=0
ICBO
-
-50
nA
VCB=-50V, IE=0
IEBO
-
-50
nA
VEB=-5V, IC=0
*VCE(sat)
-
-0.20
-0.7
V
IC=-100mA, IB=-5mA
*VBE(sat)
-
-0.82
-1.0
V
IC=-100mA, IB=-5mA
VBE(on)
-0.6
-0.65
-0.75
V
VCE=-5V, IC=-2mA
*hFE
100
200
600
VCE=-5V, IC=-1mA
fT
100
190
-
MHz
VCE=-5V, IC=-10mA
Cob
-
4.5
7
pF
VCB=-10V, f=1MHz
* Pulse Test: Pulse Width 380 s, Duty Cycle 2%
Classification Of hFE
Rank
3GB
3GC
Range
100 - 300
200 - 600
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