參數(shù)資料
型號(hào): GSMBT5089
廠商: GTM CORPORATION
英文描述: NPN EPITAXIAL PLANAR TRANSISTOR
中文描述: 瑞展晶體管
文件頁數(shù): 1/2頁
文件大?。?/td> 223K
代理商: GSMBT5089
1/2
ISSUED DATE :2005/08/31
REVISED DATE :
G
G S
S M
M B
B T
T 55008899
N
N P
P N
N E
E P
P II T
T A
A X
X II A
A L
L P
P L
L A
A N
N A
A R
R T
T R
R A
A N
N S
S II S
S T
T O
O R
R
Description
The GSMBT5089 is designed for low noise, high gain and general purpose amplifier applications.
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
0.80
1.10
L1
0.42 REF.
A1
0
0.10
L
0.15
0.35
A2
0.80
1.00
b
0.25
0.40
D
1.80
2.20
c
0.10
0.25
E
1.15
1.35
e
0.65 REF.
HE
1.80
2.40
Q1
0.15 BSC.
Absolute Maximum Ratings at Ta = 25 ::::
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
Storage Temperature
Tstg
-55~+150
Collector to Base Voltage
VCBO
30
V
Collector to Emitter Voltage
VCEO
25
V
Emitter to Base Voltage
VEBO
4.5
V
Collector Current
IC
50
mA
Total Power Dissipation
PD
225
mW
Electrical Characteristics (Ta = 25 )
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
30
-
V
IC=100uA , IE=0
BVCEO
25
-
V
IC=1mA, IB=0
BVEBO
4.5
-
V
IE=10uA ,IC=0
ICBO
-
50
nA
VCB=15V, IE=0
IEBO
-
100
nA
VEB=4.5V, IC=0
*VCE(sat)
-
500
mV
IC=10mA, IB=1mA
*VBE(sat)
-
800
mV
IC=10mA, IB=1mA
*hFE1
400
-
1200
VCE=5V, IC=0.1mA
*hFE2
450
-
VCE=5V, IC=1mA
*hFE3
400
-
VCE=5V, IC=10mA
fT
50
-
MHz
VCE=5V, IC=0.5mA, f=20MHz
Cob
-
4.0
pF
VCB=5V, IE=0, f=1MHz
* Pulse Test: Pulse Width 380 s, Duty Cycle 2%
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