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參數(shù)資料
| 型號： | GSC9585 |
| 廠商： | GTM CORPORATION |
| 英文描述： | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | P溝道增強型功率MOSFET |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 303K |
| 代理商： | GSC9585 |
GSC9585
Page: 1/4
ISSUED DATE :2006/04/21
REVISED DATE :
G
G S
S C
C 99558855
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
The GSC9585 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited
for low voltage applications such as DC/DC converters.
Features
*Simple Drive Requirement
*Lower Gate Charge
*Fast Switching Characteristic
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
5.80
6.20
M
0.10
0.25
B
4.80
5.00
H
0.35
0.49
C
3.80
4.00
L
1.35
1.75
D
0°
8°
J
0.375 REF.
E
0.40
0.90
K
45°
F
0.19
0.25
G
1.27 TYP.
Absolute Maximum Ratings
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
-80
V
Gate-Source Voltage
VGS
±25
V
Continuous Drain Current3
ID @TA=25 :
-2.7
A
Continuous Drain Current3
ID @TA=70 :
-2.1
A
Pulsed Drain Current1
IDM
-20
A
Total Power Dissipation
PD @TC=25 :
2.5
W
Linear Derating Factor
0.02
W/ :
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
:
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance Junction-ambient3
Max.
Rthj-amb
50
/
: W
BVDSS
-80V
RDS(ON)
180m
ID
-2.7A
Pb Free Plating Product
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| GSC9620 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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| GSCLM393 | DUAL DIFFERENTIAL COMPARATOR |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| GSC9620 | 制造商:GTM 制造商全稱:GTM 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GSC9685 | 制造商:GTM 制造商全稱:GTM 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GSC9985 | 制造商:GTM 制造商全稱:GTM 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GSCA-0016-03 | 制造商:ESCABLE 功能描述: |
| GSCA-0037-01 | 制造商:ESCABLE 功能描述: |
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