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參數(shù)資料
| 型號(hào)： | GSC9985 |
| 廠商： | GTM CORPORATION |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | N溝道增強(qiáng)型功率MOSFET |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 305K |
| 代理商： | GSC9985 |
GE15N03
Page: 1/5
ISSUED DATE :2005/01/25
REVISED DATE :
G
G E
E 1155N
N 0033
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
The GE15N03 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications and suited for low
voltage application such as DC/DC converters and high efficiency switching circuit.
Features
*Dynamic dv/dt Rating
*Simple Drive Requirement
*Repetitive Avalanche Rated
*Fast Switching
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
4.40
4.80
c1
1.25
1.45
b
0.76
1.00
b1
1.17
1.47
c
0.36
0.50
L
13.25
14.25
D
8.60
9.00
e
2.54 REF.
E
9.80
10.4
L1
2.60
2.89
L4
14.7
15.3
3.71
3.96
L5
6.20
6.60
A1
2.60
2.80
Absolute Maximum Ratings
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
f 20
V
Continuous Drain Current , VGS@10V
ID @TC=25 :
15
A
Continuous Drain Current , VGS@10V
ID @TC=100 :
9
A
Pulsed Drain Current1,
IDM
50
A
Total Power Dissipation
PD @TC=25 :
28
W
Linear Derating Factor
0.22
W/
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance Junction-case
Max.
Rthj-c
4.5
/W
Thermal Resistance Junction-ambient
Max.
Rthj-a
62
/W
BVDSS
30V
RDS(ON)
80m
ID
15A
Pb Free Plating Product
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| GSCA-0016-03 | 制造商:ESCABLE 功能描述: |
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| GSCA-0088-02 | 制造商:ESCABLE 功能描述: |
| GSCA-0142 | 制造商:ESCABLE 功能描述: |
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