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參數(shù)資料
| 型號(hào)： | GSC4410 |
| 廠商： | GTM CORPORATION |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | N溝道增強(qiáng)型功率MOSFET |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 321K |
| 代理商： | GSC4410 |
GSC4410
Page: 1/5
ISSUED DATE :2005/03/01
REVISED DATE :2005/09/30B
G
G S
S C
C 44441100
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
The GSC4410 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited
for low voltage applications such as DC/DC converters.
Features
*Dynamic dv/dt Rating
*Simple Drive Requirement
*Repetitive Avalanche Rated
*Fast Switching
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
5.80
6.20
M
0.10
0.25
B
4.80
5.00
H
0.35
0.49
C
3.80
4.00
L
1.35
1.75
D
0 C
8 C
J
0.375 REF.
E
0.40
0.90
K
45 C
F
0.19
0.25
G
1.27 TYP.
Absolute Maximum Ratings
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
f 20
V
Continuous Drain Current, VGS@10V
ID @TA=25 :
10
A
Continuous Drain Current, VGS@10V
ID @TA=70 :
8
A
Pulsed Drain Current1
IDM
50
A
Total Power Dissipation
PD @TA=25 :
2.5
W
Linear Derating Factor
0.02
W/
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance Junction-ambient
Max.
Rthj-amb
50
/W
BVDSS
30V
RDS(ON)
13.5m
ID
10A
Pb Free Plating Product
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| GSC4411DY | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
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| GSC4411 | 制造商:GTM 制造商全稱:GTM 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GSC4411DY | 制造商:GTM 制造商全稱:GTM 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GSC4412 | 制造商:GTM 制造商全稱:GTM 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GSC4413 | 制造商:GTM 制造商全稱:GTM 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GSC4418 | 制造商:GTM 制造商全稱:GTM 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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