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參數(shù)資料
| 型號： | GSC4411 |
| 廠商： | GTM CORPORATION |
| 英文描述： | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | P溝道增強(qiáng)型功率MOSFET |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 293K |
| 代理商： | GSC4411 |
GSC4411
Page: 1/4
ISSUED DATE :2005/09/30
REVISED DATE :
G
G S
S C
C 44441111
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
The GSC4411 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited
for low voltage applications such as DC/DC converters.
Features
*Simple Drive Requirement
*Lower On-resistance
*Fast Switching
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
5.80
6.20
M
0.10
0.25
B
4.80
5.00
H
0.35
0.49
C
3.80
4.00
L
1.35
1.75
D
0°
8°
J
0.375 REF.
E
0.40
0.90
K
45°
F
0.19
0.25
G
1.27 TYP.
Absolute Maximum Ratings
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
-30
V
Gate-Source Voltage
VGS
±25
V
Continuous Drain Current3
ID @TA=25 :
-8.2
A
Continuous Drain Current3
ID @TA=70 :
-6.5
A
Pulsed Drain Current1
IDM
-40
A
Total Power Dissipation
PD @TA=25 :
2.5
W
Linear Derating Factor
0.02
W/ :
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
:
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance Junction-ambient3
Max.
Rthj-amb
50
/
: W
BVDSS
-30V
RDS(ON)
25m
ID
-8.2A
Pb Free Plating Product
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相關(guān)代理商/技術(shù)參數(shù) |
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| GSC4411DY | 制造商:GTM 制造商全稱:GTM 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GSC4412 | 制造商:GTM 制造商全稱:GTM 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GSC4413 | 制造商:GTM 制造商全稱:GTM 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GSC4418 | 制造商:GTM 制造商全稱:GTM 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GSC4420 | 制造商:GTM 制造商全稱:GTM 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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