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參數(shù)資料

型號(hào)：	GS88218AB-133I
廠商：	GSI TECHNOLOGY
元件分類：	SRAM
英文描述：	512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
中文描述：	512K X 18 CACHE SRAM, 8.5 ns, PBGA119
封裝：	PLASTIC, BGA-119
文件頁數(shù)：	11/38頁
文件大?。?/td>	1065K
代理商：	GS88218AB-133I

GS88218/36AB/D-250/225/200/166/150/133

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

Rev: 1.04 11/2004

19/38

2001, GSI Technology

Notes:

1. These parameters are sampled and are not 100% tested.

2. ZZ is an asynchronous signal. However, in order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold

times as specified above.

AC Electrical Characteristics

Parameter

Symbol

-250

-225

-200

-166

-150

-133

Unit

Min

Max

Min

Max

Min

Max

Min

Max Min Max Min Max

Pipeline

Clock Cycle Time

tKC

4.0

—

4.4

—

5.0

—

6.0

—

6.7

—

7.5

—

ns

Clock to Output Valid

tKQ

—

2.5

—

2.7

—

3.0

—

3.4

—

3.8

—

4.0

ns

Clock to Output Invalid

tKQX

1.5

—

1.5

—

1.5

—

1.5

—

1.5

—

1.5

—

ns

Clock to Output in Low-Z

tLZ1

1.5

—

1.5

—

1.5

—

1.5

—

1.5

—

1.5

—

ns

Setup time

tS

1.2

—

1.3

—

1.4

—

1.5

—

1.5

—

1.5

—

ns

Hold time

tH

0.2

—

0.3

—

0.4

—

0.5

—

0.5

—

0.5

—

ns

Flow

Through

Clock Cycle Time

tKC

5.5

—

6.0

—

6.5

—

7.0

—

7.5

—

8.5

—

ns

Clock to Output Valid

tKQ

—

5.5

—

6.0

—

6.5

—

7.0

—

7.5

—

8.5

ns

Clock to Output Invalid

tKQX

3.0

—

3.0

—

3.0

—

3.0

—

3.0

—

3.0

—

ns

Clock to Output in Low-Z

tLZ1

3.0

—

3.0

—

3.0

—

3.0

—

3.0

—

3.0

—

ns

Setup time

tS

1.5

—

1.5

—

1.5

—

1.5

—

1.5

—

1.5

—

ns

Hold time

tH

0.5

—

0.5

—

0.5

—

0.5

—

0.5

—

0.5

—

ns

Clock HIGH Time

tKH

1.3

—

1.3

—

1.3

—

1.3

—

1.5

—

1.7

—

ns

Clock LOW Time

tKL

1.5

—

1.5

—

1.5

—

1.5

—

1.7

—

2

—

ns

Clock to Output in

High-Z

tHZ1

1.5

2.3

1.5

2.5

1.5

3.0

1.5

3.0

1.5

3.0

1.5

3.0

ns

G to Output Valid

tOE

—

2.3

—

2.5

—

3.2

—

3.5

—

3.8

—

4.0

ns

G to output in Low-Z

tOLZ1

0

—

0

—

0

—

0

—

0

—

0

—

ns

G to output in High-Z

tOHZ1

—

2.3

—

2.5

—

3.0

—

3.0

—

3.0

—

3.0

ns

ZZ setup time

tZZS2

5

—

5

—

5

—

5

—

5

—

5

—

ns

ZZ hold time

tZZH2

1

—

1

—

1

—

1

—

1

—

1

—

ns

ZZ recovery

tZZR

20

—

20

—

20

—

20

—

20

—

20

—

ns

相關(guān)PDF資料	PDF描述
GS88218AB-150	512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS88218AB-150I	512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS88218AB-166	512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS88218AB-166I	512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs
GS88218AB-200	512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs

相關(guān)代理商/技術(shù)參數(shù)	參數(shù)描述
GS88218CB-200	制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 9MBIT 512KX18 6.5NS/3NS 119FPBGA - Trays
GS88218CB-200I	制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 9MBIT 512KX18 6.5NS/3NS 119FPBGA - Trays
GS88218CB-200IV	制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 9MBIT 512KX18 6.5NS/3NS 119FPBGA - Trays
GS88218CB-200V	制造商:GSI Technology 功能描述:SRAM SYNC DUAL 1.8V/2.5V 9MBIT 512KX18 6.5NS/3NS 119FPBGA - Trays
GS88218CB-250	制造商:GSI Technology 功能描述:SRAM SYNC DUAL 2.5V/3.3V 9MBIT 512KX18 5.5NS/2.5NS 119FPBGA - Trays

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