參數(shù)資料
型號: GS881E18AT-225T
廠商: GSI TECHNOLOGY
元件分類: SRAM
英文描述: 512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
中文描述: 512K X 18 CACHE SRAM, 6 ns, PQFP100
封裝: TQFP-100
文件頁數(shù): 9/36頁
文件大?。?/td> 913K
代理商: GS881E18AT-225T
GS881E18(T/D)/GS881E32A(D)/GS881E36A(T/D)
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.04 3/2005
17/36
2001, GSI Technology
Note:
These parameters are sample tested.
Capacitance
(TA = 25oC, f = 1 MHZ, VDD = 2.5 V)
Parameter
Symbol
Test conditions
Typ.
Max.
Unit
Input Capacitance
CIN
VIN = 0 V
45
pF
Input/Output Capacitance
CI/O
VOUT = 0 V
67
pF
AC Test Conditions
Parameter
Conditions
Input high level
VDD – 0.2 V
Input low level
0.2 V
Input slew rate
1 V/ns
Input reference level
VDD/2
Output reference level
VDDQ/2
Output load
Fig. 1
Notes:
1. Include scope and jig capacitance.
2. Test conditions as specified with output loading as shown in Fig. 1
unless otherwise noted.
3. Device is deselected as defined by the Truth Table.
50% tKC
VSS – 2.0 V
50%
VSS
VIH
Undershoot Measurement and Timing
Overshoot Measurement and Timing
50% tKC
VDD + 2.0 V
50%
VDD
VIL
DQ
VDDQ/2
50
30pF*
Output Load 1
* Distributed Test Jig Capacitance
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