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參數(shù)資料
| 型號(hào)： | GS880F18 |
| 廠商： | GSI TECHNOLOGY |
| 英文描述： | 8Mb（512K x 18Bit) Synchronous Burst SRAM(8M位（512K x 18位）同步靜態(tài)RAM（帶2位脈沖地址計(jì)數(shù)器）) |
| 中文描述： | 8MB的（為512k × 18位）同步突發(fā)靜態(tài)存儲(chǔ)器（800萬(wàn)位（為512k × 18位）同步靜態(tài)隨機(jī)存儲(chǔ)器（帶2位脈沖地址計(jì)數(shù)器）） |
| 文件頁(yè)數(shù)： | 11/22頁(yè) |
| 文件大?。?/td> | 310K |
| 代理商： | GS880F18 |
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Rev: 1.06 9/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
11/22
2000, Giga Semconductor, Inc.
Preliminary
GS880F18/36T-11/11.5/12/14/18
Capacitance
(T
A
= 25
o
C, f = 1 MH
Z
, V
DD
= 3.3 V)
Note: These parameters are sample tested.
Package Thermal Characteristics
Notes:
1.
Junction temperature is a function of SRAM power dissipation, package thermal resistance, mounting board temperature, ambient. Temper-
ature air flow, board density, and PCB thermal resistance.
SCMI G-38-87
Average thermal resistance between die and top surface, MIL SPEC-883, Method 1012.1
2.
3.
Parameter
Symbol
C
IN
C
I/O
Test conditions
V
IN
= 0 V
V
OUT
= 0 V
Typ.
Max.
Unit
Input Capacitance
4
5
pF
Input/Output Capacitance
6
7
pF
Rating
Layer Board
Symbol
R
Θ
JA
R
Θ
JA
R
Θ
JC
Max
Unit
°
C/W
Notes
Junction to Ambient (at 200 lfm)
single
40
1,2
Junction to Ambient (at 200 lfm)
four
24
°
C/W
1,2
Junction to Case (TOP)
—
9
°
C/W
3
20% tKC
V
SS
– 2.0 V
50%
V
SS
V
IH
Undershoot Measurement and Timing
Overshoot Measurement and Timing
20% tKC
V
DD
+ 2.0 V
50%
V
DD
V
IL
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| GS880F18AT | 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs |
| GS880F18AT-5.5 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs |
| GS880F18AT-5.5I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs |
| GS880F18AT-6 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs |
| GS880F18AT-6.5 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs |
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