參數(shù)資料
型號(hào): GS88036
廠商: GSI TECHNOLOGY
元件分類(lèi): DRAM
英文描述: 8Mb(256K x 36Bit) Synchronous Burst SRAM(8M位(256K x 36位)同步靜態(tài)RAM(帶2位脈沖地址計(jì)數(shù)器))
中文描述: 8MB的(256 × 36Bit)同步突發(fā)靜態(tài)存儲(chǔ)器(800萬(wàn)位(256K × 36位)同步靜態(tài)隨機(jī)存儲(chǔ)器(帶2位脈沖地址計(jì)數(shù)器))
文件頁(yè)數(shù): 9/25頁(yè)
文件大?。?/td> 377K
代理商: GS88036
Rev: 1.11 9/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
9/25
2000, Giga Semconductor, Inc.
Preliminary
GS88018/32/36T-11/11.5/100/80/66
Simplified State Diagram
First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
X
W
R
R
W
R
X
X
X
S
S
CR
R
CW
CR
CR
Notes:
1.
2.
The diagramshows only supported (tested) synchronous state transitions. The diagrampresumes G is tied low.
The upper portion of the diagramassumes active use of only the Enable (E1,E2, and E3) and Write (B
A
, B
B
, B
C
, B
D
, BW, and GW) control
inputs, and that ADSP is tied high and ADSC is tied low.
The upper and lower portions of the diagramtogether assume active use of only the Enable, Write, and ADSC control inputs, and
assumes ADSP is tied high and ADV is tied low.
3.
相關(guān)PDF資料
PDF描述
GS880E36 8Mb(256K x 36Bit) Synchronous Burst SRAM(8M位(256K x 36位)同步靜態(tài)RAM(帶2位脈沖地址計(jì)數(shù)器))
GS880E18 8Mb(512K x 18Bit) Synchronous Burst SRAM(8M位(512K x 18位)同步靜態(tài)RAM(帶2位脈沖地址計(jì)數(shù)器))
GS880E32 8Mb(256K x 32Bit) Synchronous Burst SRAM(8M位(256K x 32位)同步靜態(tài)RAM(帶2位脈沖地址計(jì)數(shù)器))
GS880F18 8Mb(512K x 18Bit) Synchronous Burst SRAM(8M位(512K x 18位)同步靜態(tài)RAM(帶2位脈沖地址計(jì)數(shù)器))
GS880F36 8Mb(256K x 36Bit) Synchronous Burst SRAM(8M位(256K x 36位)同步靜態(tài)RAM(帶2位脈沖地址計(jì)數(shù)器))
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