參數(shù)資料
型號(hào)： GS8550CU
廠商： GENERAL SEMICONDUCTOR INC
元件分類(lèi)： 小信號(hào)晶體管
英文描述： 800 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-226AA
封裝： PLASTIC, TO-92, 3 PIN
文件頁(yè)數(shù)： 2/2頁(yè)
文件大小： 37K
代理商： GS8550CU
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
DC Current Gain
VCE = –1V, IC = –5mA
45
135
—
Current Gain Group B
VCE = –1V, IC = –100mA
85
—
160
ChFE
120
—
200
—
D
160
—
300
VCE = –1V, IC = –800mA
—
30
—
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC = –2mA, IB = 0
–25
——
V
Collector-Base Breakdown Voltage
V(BR)CBO
IC = –100A, IE = 0
–40
——
V
Emitter-Base Breakdown Voltage
V(BR)EBO
IE = –100A, IC = 0
–6
——
V
Collector Cut-off Current
ICBO
VCB = –35V, IE = 0
——
–100
nA
Emitter Cut-off Current
IEBO
VEB = –6V, IC = 0
——
–100
nA
Collector-Emitter Saturation Voltage
VCE(sat)
IC = –800mA, IB = –80mA
—–0.51
—
V
Base-Emitter Saturation Voltage
VBE(sat)
IC = –800mA, IB = –80mA
—–1.25
—
V
Base-Emitter ON Voltage
VBE(on)
VCE = –1V, IC = –10mA
—–0.66
–1.0
V
Output Capacitance
COB
VCB = –10V, IE = 0
—
15
—
pF
= 1 MHz
Gain-Bandwidth Product
T
VCE = –10V, IC = –50mA
—
100
—
MHz
GS8550xU
Small Signal Transistors (PNP)
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