參數(shù)資料
型號(hào)： GS840E18AT-166IT
廠商： GSI TECHNOLOGY
元件分類： SRAM
英文描述： 256K X 18 CACHE SRAM, 8.5 ns, PQFP100
封裝： TQFP-100
文件頁(yè)數(shù)： 9/32頁(yè)
文件大?。?/td> 950K
代理商： GS840E18AT-166IT
GS840E18/32/36AT/B-180/166/150/100
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.14 10/2007
17/32
1999, GSI Technology
Logic Levels
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
VDD Input High Voltage
VIH
2.0
—
VDD + 0.3
V
1
VDD Input Low Voltage
VIL
–0.3
—
0.8
V
1
VDDQ3 I/O Input High Voltage
VIHQ3
2.0
—
VDDQ + 0.3
V
1,3
VDDQ3 I/O Input Low Voltage
VILQ3
–0.3
—
0.8
V
1,3
VDDQ2 I/O Input High Voltage
VIHQ2
0.6*VDD
—
VDDQ + 0.3
V
1,3
VDDQ2 I/O Input Low Voltage
VILQ2
–0.3
—
0.3*VDD
V
1,3
Notes:
1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
2. Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
3. VIHQ (max) is voltage on VDDQ pins plus 0.3 V.
Recommended Operating Temperatures
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
Ambient Temperature (Commercial Range Versions)
TA
0
25
70
°C
2
Ambient Temperature (Industrial Range Versions)
TA
–40
25
85
°C
2
Notes:
1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifica-
tions quoted are evaluated for worst case in the temperature range marked on the device.
2. Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
50% tKC
VSS – 2.0 V
50%
VSS
VIH
Undershoot Measurement and Timing
Overshoot Measurement and Timing
50% tKC
VDD + 2.0 V
50%
VDD
VIL
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