參數(shù)資料
型號(hào): GS840E18AGT-150T
廠商: GSI TECHNOLOGY
元件分類: SRAM
英文描述: 256K X 18 CACHE SRAM, 10 ns, PQFP100
封裝: ROHS COMPLIANT, TQFP-100
文件頁數(shù): 13/32頁
文件大?。?/td> 950K
代理商: GS840E18AGT-150T
GS840E18/32/36AT/B-180/166/150/100
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.14 10/2007
20/32
1999, GSI Technology
Notes:
1. These parameters are sampled and are not 100% tested
2. ZZ is an asynchronous signal. However, In order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold
times as specified above.
AC Electrical Characteristics
Parameter
Symbol
-180
-166
-150
-100
Unit
Min
Max
Min
Max
Min
Max
Min
Max
Pipeline
Clock Cycle Time
tKC
5.5
6.0
6.7
10
ns
Clock to Output Valid
tKQ
3.0
3.5
3.8
4.5
ns
Clock to Output Invalid
tKQX
1.5
1.5
1.5
1.5
ns
Clock to Output in Low-Z
tLZ1
1.5
1.5
1.5
1.5
ns
Flow
Through
Clock Cycle Time
tKC
9.0
10.0
12.0
15.0
ns
Clock to Output Valid
tKQ
8.0
8.5
10.0
12.0
ns
Clock to Output Invalid
tKQX
3.0
3.0
3.0
3.0
ns
Clock to Output in Low-Z
tLZ1
3.0
3.0
3.0
3.0
ns
Clock HIGH Time
tKH
1.3
1.3
1.3
1.3
ns
Clock LOW Time
tKL
1.5
1.5
1.5
1.5
ns
Clock to Output in High-Z
tHZ1
1.5
3.2
1.5
3.5
1.5
3.8
1.5
5
ns
G to Output Valid
tOE
3.2
3.5
3.8
5
ns
G to output in Low-Z
tOLZ1
0
0
0
0
ns
G to output in High-Z
tOHZ1
3.2
3.5
3.8
5
ns
Setup time
tS
1.5
1.5
1.5
2.0
ns
Hold time
tH
0.5
0.5
0.5
0.5
ns
ZZ setup time
tZZS2
5
5
5
5
ns
ZZ hold time
tZZH2
1
1
1
1
ns
ZZ recovery
tZZR
20
20
20
20
ns
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參數(shù)描述
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GS840E18AGT-180 制造商:GSI 制造商全稱:GSI Technology 功能描述:256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs
GS840E18AGT-180I 制造商:GSI 制造商全稱:GSI Technology 功能描述:256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs
GS840E18AGT-190 制造商:GSI 制造商全稱:GSI Technology 功能描述:256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs