參數(shù)資料
型號： GS832472GC-250T
廠商： GSI TECHNOLOGY
元件分類： SRAM
英文描述： 512K X 72 CACHE SRAM, 6 ns, PBGA209
封裝： 14 X 22 MM, 1 MM PITCH, BGA-209
文件頁數(shù)： 13/46頁
文件大?。?/td> 1126K
代理商： GS832472GC-250T
Rev: 1.00 10/2001
20/46
2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preliminary
GS832418(B/C)/GS832436(B/C)/GS832472(C)
Power Supply Voltage Ranges
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
3.3 V Supply Voltage
VDD3
3.0
3.3
3.6
V
2.5 V Supply Voltage
VDD2
2.3
2.5
2.7
V
3.3 V VDDQ I/O Supply Voltage
VDDQ3
3.0
3.3
3.6
V
2.5 V VDDQ I/O Supply Voltage
VDDQ2
2.4
2.5
2.7
V
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are
evaluated for worst case in the temperature range marked on the device.
2.
Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
VDDQ3 Range Logic Levels
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
VDD Input High Voltage
VIH
1.7
—
VDD + 0.3
V
1
VDD Input Low Voltage
VIL
–
0.3
—
0.8
V
1
VDDQ I/O Input High Voltage
VIHQ
1.7
—
VDDQ + 0.3
V
1,3
VDDQ I/O Input Low Voltage
VILQ
–
0.3
—
0.8
V
1,3
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are
evaluated for worst case in the temperature range marked on the device.
2.
Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
3.
VIHQ (max) is voltage on VDDQ pins plus 0.3 V.
VDDQ2 Range Logic Levels
Parameter
Symbol
Min.
Typ.
Max.
Unit
Notes
VDD Input High Voltage
VIH
0.6*VDD
—
VDD + 0.3
V
1
VDD Input Low Voltage
VIL
–
0.3
—
0.3*VDD
V
1
VDDQ I/O Input High Voltage
VIHQ
0.6*VDD
—
VDDQ + 0.3
V
1,3
VDDQ I/O Input Low Voltage
VILQ
–
0.3
—
0.3*VDD
V
1,3
Notes:
1.
The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are
evaluated for worst case in the temperature range marked on the device.
2.
Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC.
3.
VIHQ (max) is voltage on VDDQ pins plus 0.3 V.
相關(guān)PDF資料
PDF描述
GS8342D08E-333T 4M X 8 STANDARD SRAM, 0.45 ns, PBGA165
GS8342Q08AE-278 4M X 8 DDR SRAM, 0.45 ns, PBGA165
GS84018AB-190 256K X 18 CACHE SRAM, 7.5 ns, PBGA119
GS840E18AGT-150T 256K X 18 CACHE SRAM, 10 ns, PQFP100
GS840E18AT-166IT 256K X 18 CACHE SRAM, 8.5 ns, PQFP100
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS8324Z36B-133 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 36MBIT 1MX36 10NS/4NS 119FBGA - Trays
GS8324Z36B-200I 制造商:GSI Technology 功能描述:SRAM SYNC QUAD 2.5V/3.3V 36MBIT 1MX36 7.5NS/3NS 119FBGA - Trays
GS8324Z72C200 制造商:G.S.I. 功能描述:
GS8342D06BD-350 制造商:GSI Technology 功能描述:165 FBGA - Bulk
GS8342D06BD-500 制造商:GSI Technology 功能描述:165 FBGA - Bulk
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*