參數(shù)資料
型號: GS832236AB-300T
廠商: GSI TECHNOLOGY
元件分類: SRAM
英文描述: 1M X 36 CACHE SRAM, PBGA119
封裝: 14 X 22 MM, 1.27 MM PITCH, FPBGA-119
文件頁數(shù): 5/39頁
文件大小: 827K
代理商: GS832236AB-300T
First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
WR
R
W
R
X
CR
R
CW
CR
W
CW
W
CW
Notes:
1. The diagram shows supported (tested) synchronous state transitions plus supported transitions that depend upon the use of G.
2. Use of “Dummy Reads” (Read Cycles with G High) may be used to make the transition from read cycles to write cycles without passing
through a Deselect cycle. Dummy Read cycles increment the address counter just like normal read cycles.
3. Transitions shown in grey tone assume G has been pulsed high long enough to turn the RAM’s drivers off and for incoming data to meet
Data Input Set Up Time.
GS832218/36A(B/D)-400/375/333/250/200/150
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.00a 2/2011
13/39
2011, GSI Technology
Preliminary
Simplified State Diagram with G
相關(guān)PDF資料
PDF描述
GS832472GC-150I 512K X 72 CACHE SRAM, 10 ns, PBGA209
GS832472GC-250T 512K X 72 CACHE SRAM, 6 ns, PBGA209
GS8342D08E-333T 4M X 8 STANDARD SRAM, 0.45 ns, PBGA165
GS8342Q08AE-278 4M X 8 DDR SRAM, 0.45 ns, PBGA165
GS84018AB-190 256K X 18 CACHE SRAM, 7.5 ns, PBGA119
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS832236AB-333 制造商:GSI Technology 功能描述:119 BGA - Bulk
GS832236AB-333I 制造商:GSI Technology 功能描述:119 BGA - Bulk
GS832236AB-375 制造商:GSI Technology 功能描述:119 BGA - Bulk
GS832236AB-375I 制造商:GSI Technology 功能描述:119 BGA - Bulk
GS832236AB-375M 制造商:GSI Technology 功能描述:119 BGA - Bulk