參數(shù)資料
型號(hào): GS8161Z36T-180I
英文描述: x36 Fast Synchronous SRAM
中文描述: x36快速同步SRAM
文件頁數(shù): 24/24頁
文件大?。?/td> 468K
代理商: GS8161Z36T-180I
Rev: 2.06 8/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
24/24
1998, Giga Semconductor, Inc.
Preliminary
GS8160Z18/36T-225/200/180/166/150/133
0.18u 16MSync SRAMData Sheet Revision History
DS/DateRev. Code: Old;
New
Types of Changes
Format or Content
Page;Revisions;Reason
GS8160Z18/36T 1.00 9/
1999A;GS8160Z18/36T2.0012/
1999B
Content
Converted from 0.25u 3.3V process to 0.18u 2.5V process. Master
File Rev B
Added x72 Pinout.
GS8160Z18/36T2.00 12/
1999BGS8160Z18/36T2.01 1/
2000C
Format
Added new GSI Logo
GS8160Z18/36T2.01 1/
2000DGS8160Z18/36T2.03 2/
2000E
Front page; Features - changed 2.5V I/O supply to 2.5V or3.3V I/O
supply; Completeness
Absolute Maximum Ratings; Changed VDDQ - Value: From: -.05 to
VDD : to : -.05 to 3.6; Completeness.
Recommended Operating Conditions;Changed: I/O Supply Voltage-
Max. from VDD to 3.6; Input High Voltage- Max. from VDD +0.3 to
3.6; Same page - took out Note 1;Completeness
Electrical Characteristics - Added second Output High Voltage line to
table; completeness.
Note: There was not a Rev 2.02 for the 8160Z or the 8161Z.
Removed pin 14 from V
SS
in pin description table.
ADV changed to pin 85 in pin description table.
GS8160Z18/36T2.03 2/2000E;
8160Z18_r2_04
Content
8160Z18_r2_04;
8160Z18_r2_05
Content
Changed the value of ZZ recovery in the AC Electrical Characteristics
table on page 17 from 20 ns to 100 ns
8160Z18_r2_05;
8160Z18_r2_06
Content
Added 225 MHz speed bin
Updated Pg. 1 table, AC Characteristics table, and Operating Cur-
rents table to match 815xxx
Updated format to comply with Technical Publications standards
This Material Copyrighted by Its Respective Manufacturer
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