- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383025 > GS8161Z32BD-250I (GSI TECHNOLOGY) 18Mb Pipelined and Flow Through Synchronous NBT SRAM PDF資料下載
參數(shù)資料
| 型號： | GS8161Z32BD-250I |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 18Mb Pipelined and Flow Through Synchronous NBT SRAM |
| 中文描述： | 512K X 32 ZBT SRAM, 5.5 ns, PBGA165 |
| 封裝： | 13 X 15 MM, 1 MM PITCH, FBGA-165 |
| 文件頁數(shù)： | 4/37頁 |
| 文件大?。?/td> | 618K |
| 代理商： | GS8161Z32BD-250I |
第1頁第2頁第3頁當(dāng)前第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁
GS8161Z18B(T/D)/GS8161Z32B(D)/GS8161Z36B(T/D)
Preliminary
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.00 9/2004
4/37
2004, GSI Technology
100-Pin TQFP Pin Descriptions
Symbol
Type
Description
A
0
, A
1
In
Burst Address Inputs; Preload the burst counter
A
In
Address Inputs
CK
In
Clock Input Signal
B
A
In
Byte Write signal for data inputs DQ
A1
–DQ
A9
; active low
B
B
In
Byte Write signal for data inputs DQ
B1
–DQ
B9
; active low
B
C
In
Byte Write signal for data inputs DQ
C1
–DQ
C9
; active low
B
D
In
Byte Write signal for data inputs DQ
D1
–DQ
D9
; active low
W
In
Write Enable; active low
E
1
In
Chip Enable; active low
E
2
In
Chip Enable—Active High. For self decoded depth expansion
E
3
In
Chip Enable—Active Low. For self decoded depth expansion
G
In
Output Enable; active low
ADV
In
Advance/Load; Burst address counter control pin
CKE
In
Clock Input Buffer Enable; active low
NC
—
No Connect
DQ
A
I/O
Byte A Data Input and Output pins
DQ
B
I/O
Byte B Data Input and Output pins
DQ
C
I/O
Byte C Data Input and Output pins
DQ
D
I/O
Byte D Data Input and Output pins
ZZ
In
Power down control; active high
FT
In
Pipeline/Flow Through Mode Control; active low
LBO
In
Linear Burst Order; active low.
TMS
Scan Test Mode Select
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS8161Z32D | 18Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8161Z36B | 18Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8161Z36BD | 18Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8161Z36BD-150 | 18Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8161Z36BD-150I | 18Mb Pipelined and Flow Through Synchronous NBT SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS8161Z32BD-250IV | 制造商:GSI 制造商全稱:GSI Technology 功能描述:18Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8161Z32BD-250V | 制造商:GSI 制造商全稱:GSI Technology 功能描述:18Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8161Z32BGD-150IV | 制造商:GSI 制造商全稱:GSI Technology 功能描述:18Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8161Z32BGD-150V | 制造商:GSI 制造商全稱:GSI Technology 功能描述:18Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8161Z32BGD-200IV | 制造商:GSI 制造商全稱:GSI Technology 功能描述:18Mb Pipelined and Flow Through Synchronous NBT SRAM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。