參數(shù)資料
型號: GS8161V36CGD-300
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 1M x 18 and 512K x 36 18Mb Sync Burst SRAMs
中文描述: 512K X 36 CACHE SRAM, 5 ns, PBGA165
封裝: 13 X 15 MM, 1 MM PITCH, LEAD FREE, FBGA-165
文件頁數(shù): 10/28頁
文件大?。?/td> 584K
代理商: GS8161V36CGD-300
GS8161V18/36CD-333/300/250
Preliminary
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01 2/2005
10/28
2004, GSI Technology
Simplified State Diagram with G
First Write
First Read
Burst Write
Burst Read
Deselect
R
W
CR
CW
X
X
W
R
R
W
R
X
X
X
CR
R
CW
CR
CR
W
CW
W
CW
Notes:
1.
2.
The diagram shows supported (tested) synchronous state transitions plus supported transitions that depend upon the use of G.
Use of “Dummy Reads” (Read Cycles with G High) may be used to make the transition from read cycles to write cycles without passing
through a deselect cycle. Dummy read cycles increment the address counter just like normal read cycles.
Transitions shown in gray tone assume G has been pulsed high long enough to turn the RAM’s drivers off and for incoming data to meet
Data Input Set Up Time.
3.
相關(guān)PDF資料
PDF描述
GS8161V36CGD-300I 1M x 18 and 512K x 36 18Mb Sync Burst SRAMs
GS8161V36CGD-333 1M x 18 and 512K x 36 18Mb Sync Burst SRAMs
GS8161V36CGD-333I 1M x 18 and 512K x 36 18Mb Sync Burst SRAMs
GS8161Z18B 18Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8161Z32BD-250I 18Mb Pipelined and Flow Through Synchronous NBT SRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS8161V36CGD-300I 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18 and 512K x 36 18Mb Sync Burst SRAMs
GS8161V36CGD-333 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18 and 512K x 36 18Mb Sync Burst SRAMs
GS8161V36CGD-333I 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18 and 512K x 36 18Mb Sync Burst SRAMs
GS8161Z18 制造商:GSI 制造商全稱:GSI Technology 功能描述:18Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8161Z18B 制造商:GSI 制造商全稱:GSI Technology 功能描述:18Mb Pipelined and Flow Through Synchronous NBT SRAM