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參數(shù)資料
| 型號： | GS8161E36BT-150V |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | DRAM |
| 英文描述： | 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs |
| 中文描述： | 512K X 36 CACHE SRAM, 7.5 ns, PQFP100 |
| 封裝： | TQFP-100 |
| 文件頁數(shù)： | 33/35頁 |
| 文件大?。?/td> | 779K |
| 代理商： | GS8161E36BT-150V |
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GS8161ExxB(T/D)-xxxV
Preliminary
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01a 6/2006
33/35
2004, GSI Technology
1M x 18
1M x 18
1M x 18
512K x 36
512K x 36
512K x 36
1M x 18
1M x 18
1M x 18
512K x 36
512K x 36
512K x 36
1M x 18
1M x 18
1M x 18
512K x 32
512K x 32
512K x 32
512K x 36
512K x 36
512K x 36
1M x 18
1M x 18
1M x 18
512K x 32
512K x 32
512K x 32
512K x 36
512K x 36
512K x 36
Notes:
1.
Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS8161E18BT-150IVT.
2.
The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each
device is Pipeline/Flow Through mode-selectable by the user.
3.
T
A
= C = Commercial Temperature Range. T
A
= I = Industrial Temperature Range.
4.
MP = Mass Production. PQ = Pre-Qualification.
5.
GSI offers other versions this type of device in many different configurations and with a variety of different features, only some of which are
covered in this data sheet. See the GSI Technology web site (www.gsitechnology.com) for a complete listing of current offerings.
GS8161E18BGT-250V
GS8161E18BGT-200V
GS8161E18BGT-150V
GS8161E36BGT-250V
GS8161E36BGT-200V
GS8161E36BGT-150V
GS8161E18BGT-250IV
GS8161E18BGT-200IV
GS8161E18BGT-150IV
GS8161E36BGT-250IV
GS8161E36BGT-200IV
GS8161E36BGT-150IV
GS8161E18BGD-250V
GS8161E18BGD-200V
GS8161E18BGD-150V
GS8161E32BGD-250V
GS8161E32BGD-200V
GS8161E32BGD-150V
GS8161E36BGD-250V
GS8161E36BGD-200V
GS8161E36BGD-150V
GS8161E18BGD-250IV
GS8161E18BGD-200IV
GS8161E18BGD-150IV
GS8161E32BGD-250IV
GS8161E32BGD-200IV
GS8161E32BGD-150IV
GS8161E36BGD-250IV
GS8161E36BGD-200IV
GS8161E36BGD-150IV
DCD
DCD
DCD
DCD
DCD
DCD
DCD
DCD
DCD
DCD
DCD
DCD
DCD
DCD
DCD
DCD
DCD
DCD
DCD
DCD
DCD
DCD
DCD
DCD
DCD
DCD
DCD
DCD
DCD
DCD
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
1.8 V or 2.5 V
RoHS-compliant TQFP
RoHS-compliant TQFP
RoHS-compliant TQFP
RoHS-compliant TQFP
RoHS-compliant TQFP
RoHS-compliant TQFP
RoHS-compliant TQFP
RoHS-compliant TQFP
RoHS-compliant TQFP
RoHS-compliant TQFP
RoHS-compliant TQFP
RoHS-compliant TQFP
RoHS-compliant 165 BGA
RoHS-compliant 165 BGA
RoHS-compliant 165 BGA
RoHS-compliant 165 BGA
RoHS-compliant 165 BGA
RoHS-compliant 165 BGA
RoHS-compliant 165 BGA
RoHS-compliant 165 BGA
RoHS-compliant 165 BGA
RoHS-compliant 165 BGA
RoHS-compliant 165 BGA
RoHS-compliant 165 BGA
RoHS-compliant 165 BGA
RoHS-compliant 165 BGA
RoHS-compliant 165 BGA
RoHS-compliant 165 BGA
RoHS-compliant 165 BGA
RoHS-compliant 165 BGA
250/5.5
200/6.5
150/7.5
250/5.5
200/6.5
150/7.5
250/5.5
200/6.5
150/7.5
250/5.5
200/6.5
150/7.5
250/5.5
200/6.5
150/7.5
250/5.5
200/6.5
150/7.5
250/5.5
200/6.5
150/7.5
250/5.5
200/6.5
150/7.5
250/5.5
200/6.5
150/7.5
250/5.5
200/6.5
150/7.5
C
C
C
C
C
C
I
I
I
I
I
I
C
C
C
C
C
C
C
C
C
I
I
I
I
I
I
I
I
I
PQ
PQ
PQ
PQ
PQ
PQ
PQ
PQ
PQ
PQ
PQ
PQ
PQ
PQ
PQ
PQ
PQ
PQ
PQ
PQ
PQ
PQ
PQ
PQ
PQ
PQ
PQ
PQ
PQ
PQ
Ordering Information for GSI Synchronous Burst RAMs (Continued)
Org
Part Number
1
Type
Voltage
Option
Package
Speed
2
(MHz/ns)
T
A3
Status
4
相關PDF資料 |
PDF描述 |
|---|---|
| GS8161V36CD-300 | 1M x 18 and 512K x 36 18Mb Sync Burst SRAMs |
| GS8161V18CD | 1M x 18 and 512K x 36 18Mb Sync Burst SRAMs |
| GS8161V18CD-250 | 1M x 18 and 512K x 36 18Mb Sync Burst SRAMs |
| GS8161V18CD-250I | 1M x 18 and 512K x 36 18Mb Sync Burst SRAMs |
| GS8161V18CD-300 | 1M x 18 and 512K x 36 18Mb Sync Burst SRAMs |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| GS8161E36BT-200 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs |
| GS8161E36BT-200I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs |
| GS8161E36BT-200IV | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs |
| GS8161E36BT-200V | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs |
| GS8161E36BT-250 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs |
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