參數資料
型號: GS8161E36BT-150V
廠商: GSI TECHNOLOGY
元件分類: DRAM
英文描述: 1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
中文描述: 512K X 36 CACHE SRAM, 7.5 ns, PQFP100
封裝: TQFP-100
文件頁數: 29/35頁
文件大?。?/td> 779K
代理商: GS8161E36BT-150V
GS8161ExxB(T/D)-xxxV
Preliminary
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01a 6/2006
29/35
2004, GSI Technology
JTAG Port Timing Diagram
tTH
tTS
tTKQ
tTH
tTS
tTH
tTS
tTKL
tTKH
tTKC
TCK
TDI
TMS
TDO
Parallel SRAM input
JTAG Port AC Electrical Characteristics
Parameter
TCK Cycle Time
TCK Low to TDO Valid
TCK High Pulse Width
TCK Low Pulse Width
TDI & TMS Set Up Time
TDI & TMS Hold Time
Symbol
tTKC
tTKQ
tTKH
tTKL
tTS
tTH
Min
50
20
20
10
10
Max
20
Unit
ns
ns
ns
ns
ns
ns
Boundary Scan (BSDL Files)
For information regarding the Boundary Scan Chain, or to obtain BSDL files for this part, please contact our Applications
Engineering Department at: apps@gsitechnology.com.
相關PDF資料
PDF描述
GS8161V36CD-300 1M x 18 and 512K x 36 18Mb Sync Burst SRAMs
GS8161V18CD 1M x 18 and 512K x 36 18Mb Sync Burst SRAMs
GS8161V18CD-250 1M x 18 and 512K x 36 18Mb Sync Burst SRAMs
GS8161V18CD-250I 1M x 18 and 512K x 36 18Mb Sync Burst SRAMs
GS8161V18CD-300 1M x 18 and 512K x 36 18Mb Sync Burst SRAMs
相關代理商/技術參數
參數描述
GS8161E36BT-200 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
GS8161E36BT-200I 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
GS8161E36BT-200IV 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
GS8161E36BT-200V 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
GS8161E36BT-250 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs