- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370386 > GS8160Z18T-180IT x18 Fast Synchronous SRAM PDF資料下載
參數(shù)資料
| 型號： | GS8160Z18T-180IT |
| 英文描述： | x18 Fast Synchronous SRAM |
| 中文描述： | x18快速同步SRAM |
| 文件頁數(shù)： | 11/24頁 |
| 文件大小： | 468K |
| 代理商： | GS8160Z18T-180IT |
Rev: 2.06 8/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
11/24
1998, Giga Semconductor, Inc.
Preliminary
GS8160Z18/36T-225/200/180/166/150/133
Burst Cycles
Although NBT RAMs are designed to sustain 100% bus bandwidth by eliminating turnaround cycle when there is transition from
read to write, multiple back-to-back reads or writes may also be performed. NBT SRAMs provide an on-chip burst address
generator that can be utilized, if desired, to further simplify burst read or write implementations. The ADV control pin, when
driven high, commands the SRAM to advance the internal address counter and use the counter generated address to read or write
the SRAM. The starting address for the first cycle in a burst cycle series is loaded into the SRAM by driving the ADV pin low, into
Load mode.
Burst Order
The burst address counter wraps around to its initial state after four addresses (the loaded address and three more) have been
accessed. The burst sequence is determined by the state of the Linear Burst Order pin (LBO). When this pin is low, a linear burst
sequence is selected. When the RAM is installed with the LBO pin tied high, Interleaved burst sequence is selected. See the tables
below for details.
Mode Pin Functions
Note:
There are pull-up devices on the LBO and FT pins and a pull-down device on the ZZ pin, so those input pins can be unconnected
and the chip will operate in the default states as specified in the above tables.
Burst Counter Sequences
Linear Burst Sequence
BPR 1999.05.18
Sleep Mode
During normal operation, ZZ must be pulled low, either by the user or by it’s internal pull down resistor. When ZZ is pulled high,
the SRAM will enter a Power Sleep mode after 2 cycles. At this time, internal state of the SRAM is preserved. When ZZ returns to
low, the SRAM operates normally after 2 cycles of wake up time.
Mode Name
Pin
Name
State
Function
Burst Order Control
LBO
L
Linear Burst
Interleaved Burst
Flow Through
Pipeline
Active
Standby, I
DD
= I
SB
H or NC
L
H or NC
L or NC
Output Register Control
FT
Power Down Control
ZZ
H
Note: The burst counter wraps to initial state on the 5th clock.
I
nterleaved Burst Sequence
Note: The burst counter wraps to initial state on the 5th clock.
A[1:0] A[1:0] A[1:0] A[1:0]
1st address
00
01
10
11
2nd address
01
10
11
00
3rd address
10
11
00
01
4th address
11
00
01
10
A[1:0] A[1:0] A[1:0] A[1:0]
1st address
00
01
10
11
2nd address
01
00
11
10
3rd address
10
11
00
01
4th address
11
10
01
00
This Material Copyrighted by Its Respective Manufacturer
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS8160Z36T-180 | x36 Fast Synchronous SRAM |
| GS8160Z36T-180I | x36 Fast Synchronous SRAM |
| GS8160Z36T-180IT | x36 Fast Synchronous SRAM |
| GS8160Z36T-180T | x36 Fast Synchronous SRAM |
| GS8161Z18T-180 | x18 Fast Synchronous SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS8160Z18T-180T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x18 Fast Synchronous SRAM |
| GS8160Z18T-200 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:18Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8160Z18T-200I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:18Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8160Z18T-225 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:18Mb Pipelined and Flow Through Synchronous NBT SRAM |
| GS8160Z18T-225I | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:18Mb Pipelined and Flow Through Synchronous NBT SRAM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。