參數(shù)資料
型號(hào): GS8160Z18T-180I
英文描述: x18 Fast Synchronous SRAM
中文描述: x18快速同步SRAM
文件頁數(shù): 13/24頁
文件大?。?/td> 468K
代理商: GS8160Z18T-180I
Rev: 2.06 8/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
13/24
1998, Giga Semconductor, Inc.
Preliminary
GS8160Z18/36T-225/200/180/166/150/133
Absolute Maximum Ratings
(All voltages reference to V
SS
)
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to
Recommended Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of
time, may affect reliability of this component.
Note:
1.
The part number of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications
quoted are evaluated for worst case in the temperature range marked on the device.
Input Under/overshoot voltage must be
2 V > Vi < V
DD
+2 V with a pulse width not to exceed 20% tKC.
2.
Symbol
V
DD
V
DDQ
V
CK
V
I/O
V
IN
I
IN
I
OUT
P
D
T
STG
T
BIAS
Description
Voltage on V
DD
Pins
Voltage in V
DDQ
Pins
Value
Unit
0.5 to 3.6
V
0.5 to 3.6
V
Voltage on Clock Input Pin
0.5 to 6
V
Voltage on I/O Pins
0.5 to V
DDQ
+0.5 (
3.6 V max.)
0.5 to 3.6
V
Voltage on Other Input Pins
V
Input Current on Any Pin
+/
20
mA
Output Current on Any I/O Pin
+/
20
mA
Package Power Dissipation
1.5
W
Storage Temperature
55 to 125
o
C
Temperature Under Bias
55 to 125
o
C
Recommended Operating Conditions
Parameter
Symbol
Mn.
Typ.
Max.
Unit
Notes
Supply Voltage
V
DD
2.375
2.5
2.7
V
I/O Supply Voltage
V
DDQ
2.375
2.5
3.6
V
Input High Voltage
V
IH
0.7 *V
DD
3.6
V
1
Input Low Voltage
V
IL
0.3
0.3 *VDD
V
1
Ambient Temperature (Commercial Range Versions)
T
A
0
25
70
°
C
2
Ambient Temperature (Industrial Range Versions)
T
A
40
25
85
°
C
2
This Material Copyrighted by Its Respective Manufacturer
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